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Ta2O5绝缘层厚度对ZnO基薄膜晶体管器件性能的影响
Effect of Ta2 O5 Thickness on The Performances of ZnO-based Thin Film Transistors
- 发光学报 2011年32卷第2期 页码：188-193
- 作者机构：
1. 上海大学材料科学与工程学院 上海,200072
2. 上海大学 新型显示技术及应用集成教育部重点实验室 上海,200072
- 作者简介：
- 基金信息：Project supported by the National Natural Science Foundation of China (60777018, 607
DOI：
中图分类号： O472.4收稿日期：2010-08-25，
修回日期：2010-11-15，
网络出版日期：2011-02-22，
纸质出版日期：2011-02-22
- 稿件说明：
移动端阅览
周帆, 张良, 李俊, 张小文, 林华平, 俞东斌, 蒋雪茵, 张志林. Ta<sub>2</sub>O<sub>5</sub>绝缘层厚度对ZnO基薄膜晶体管器件性能的影响[J]. 发光学报, 2011,32(2): 188-193
ZHOU Fan, ZHANG Liang, LI Jun, ZHANG Xiao-wen, LIN Hua-ping, YU Dong-bin, JIANG Xue-yin, ZHANG Zhi-lin. Effect of Ta<sub>2</sub> O<sub>5</sub> Thickness on The Performances of ZnO-based Thin Film Transistors[J]. Chinese Journal of Luminescence, 2011,32(2): 188-193
周帆, 张良, 李俊, 张小文, 林华平, 俞东斌, 蒋雪茵, 张志林. Ta<sub>2</sub>O<sub>5</sub>绝缘层厚度对ZnO基薄膜晶体管器件性能的影响[J]. 发光学报, 2011,32(2): 188-193 DOI：
ZHOU Fan, ZHANG Liang, LI Jun, ZHANG Xiao-wen, LIN Hua-ping, YU Dong-bin, JIANG Xue-yin, ZHANG Zhi-lin. Effect of Ta<sub>2</sub> O<sub>5</sub> Thickness on The Performances of ZnO-based Thin Film Transistors[J]. Chinese Journal of Luminescence, 2011,32(2): 188-193 DOI：
摘要
报道了不同厚度Ta
2
O
5
栅绝缘层对氧化锌薄膜晶体管器件性能的影响。在室温下用射频磁控溅射分别制备了100
85
60
40 nm厚度的Ta
2
O
5
薄膜作为绝缘层的一组底栅氧化锌薄膜晶体管器件。从实验结果可以得出如下结论:随着Ta
2
O
5
栅绝缘层厚度的增加
相应器件的场效应迁移率下降
其数值分别是50.5
59.3
63.8
71.2 cm
2
/Vs
对应100
85
60
40 nm厚度的绝缘层。从原子力显微图像可以看到
Ta
2
O
5
薄膜表面粗糙度随着薄膜厚度的减小而降低
这是场效应迁移率得以提高的主要原因。而100
85
60
40 nm不同厚度的绝缘层相应器件的开关电流比分别是1.210
5
4.810
5
3.210
4
7.210
3
其阈值电压分别为1.9
1.5
1.2
0.9 V。从各项性能综合考虑
85 nm厚度的Ta
2
O
5
栅绝缘层所制备的薄膜晶体管器件具有最佳性能。
Abstract
Bottom-gate ZnO thin-film transistors (ZnO-TFTs) were fabricated with Ta
2
O
5
film as the insulator. Ta
2
O
5
film was grown by the radio-frequency magnetron sputtering at room temperature. The thickness of the Ta
2
O
5
layers were 100
85
60
40 nm separately. The effect of the thickness on the performance of the ZnO-TFTs was studied. With the thickness of the insulator decreased from 100
85
60 nm to 40 nm
the field effect mobility increased from 50.5
59.3
63.8 to 71.2 cm
2
/Vs. The surface morphology of the Ta
2
O
5
films were checked by the atomic force microscope
which showed that the root mean square (RMS) of the Ta
2
O
5
films roughness decreases with decreasing the insulator thickness. The
I
on
/
I
off
ratio and the threshold voltage are changed with the insulator thickness.
关键词
Keywords
references
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