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1. 长春理工大学 高功率半导体激光国家重点实验室,吉林 长春,130022
2. 海特光电有限责任公司 北京,100083
收稿日期:2010-06-30,
修回日期:2010-09-21,
网络出版日期:2011-02-22,
纸质出版日期:2011-02-22
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马祥柱, 霍晋, 曲轶, 杜石磊, 王宇. C-mount封装不同激光器芯片尺寸的热阻分析[J]. 发光学报, 2011,32(2): 184-187
MA Xiang-zhu, HUO Jin, QU Yi, DU Shi-lei, WANG Yu. Thermal-resistor Analysis of The Laser Chips with Different Size in C-mount Package[J]. Chinese Journal of Luminescence, 2011,32(2): 184-187
采用波长漂移法对基于C-mount封装类型的不同尺寸芯片的热阻进行测量
得到了使热阻最小的最佳芯片尺寸和铟焊料厚度。测量结果表明
在铟焊料厚度为10 m、输出功率为2 W、条宽为200 m、腔长为2 000 m时
激光器芯片的热阻最小值为2.01 ℃/W。在铟焊料厚度为5 m和10 m两种条件下
对腔长为2 000 m的不同条宽的激光器芯片的热阻进行了测量
在铟焊料厚度为5 m时
激光器芯片的热阻由原来的2.01 ℃/W降到了1.85 ℃/W。
Thermal-resistor of different chips based on C-mount package have been measured with the method of wavelength shift in this paper.Through the thermal-resistance measurement
we can get the best size of chip and the thickness of In solder to make the smallest thermal-resistance. The results show that when the thickness of In solder is 10 m
the output power is 2 W
the bar width is 200 m
the cavity length is 2 000 m and the minimum thermal-resistor of the chip is 2.01 ℃/W.The thermal-resistors with carvity length of 2 000 s have been measured when the In solder thickness is 5 m and 10 m. The results show that the thermal-resistor dropes from 2.01 ℃/W to 1.85 ℃/W for the 5 m In solider.
Wang Hui, Wang Dehong. Thermal analysis of the semiconductor lasers welding [J]. Micronanoelectronic Technology (微纳电子技术), 2008, 45 (7):428-431 (in Chinese).[2] Ma Qiang, Tian Zhenhua, Wang Zhenfu, et al. A theoretical model of high powe VCSEL based on the thermal-offset-current [J]. Chin. J. Lumin.(发光学报), 2010, 30 (4):463-466 (in Chinese).[3] Ishikawa H, Fujiwara T, Fukiwara K, et al. Accelerated aging test of Ga1-xAlxAs DH lasers [J]. J. Appl. Phys., 1979, 50 (4):2518-2522.[4] Cao Yulian, Wang Le, Liao Xinsheng, et al. Reliability of high-power semiconductor laser diodes [J]. Chin. J. Lumin.(发光学报), 2003, 20 (1):100-102 (in Chinese).[5] Hou Lifeng, Zhong Gang, Zhao Yingjie, et al. High-power VCSEL with radial brigde electrodes [J]. Acta Photonica Sinica (光子学报), 2010, 39 (1):1-5 (in Chinese).[6] Park J, Lee C C. An electrical method with junction temperature for light-emitting diodes and the impact on conversion efficiency [J]. IEEE Electron Device Lett., 2005, 26 (9):308-310.[7] Jiang Jianping.Semiconductor Lasers [M]. Beijing: Publishing House of Electronics Industry, 2000:91-92.[8] Kang Junjian, Wang Dacheng, Su Meikai, et al. Study on the continuous testing system of LD [J]. Laser Jounral (激光杂志), 2002, 23 (6):28-29 (in Chinese).
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