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1. 中国科学院 研究生院 北京,100039
2. 中国科学院 激发态重点实验室 长春光学精密机械与物理研究所,吉林 长春,130033
收稿日期:2011-07-21,
修回日期:2011-10-08,
网络出版日期:2011-12-22,
纸质出版日期:2011-12-22
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徐华伟, 张金龙, 宁永强, 曾玉刚, 张星. RAS在线监测AlGaAs的MOCVD生长[J]. 发光学报, 2011,32(12): 1297-1302
XU Hua-wei, ZHANG Jin-long, NING Yong-qiang, ZENG Yu-gang, ZHANG Xing. In-situ Monitoring of AlGaAs Growth by Reflectance Anisotropy Spectroscopy in MOCVD[J]. Chinese Journal of Luminescence, 2011,32(12): 1297-1302
徐华伟, 张金龙, 宁永强, 曾玉刚, 张星. RAS在线监测AlGaAs的MOCVD生长[J]. 发光学报, 2011,32(12): 1297-1302 DOI:
XU Hua-wei, ZHANG Jin-long, NING Yong-qiang, ZENG Yu-gang, ZHANG Xing. In-situ Monitoring of AlGaAs Growth by Reflectance Anisotropy Spectroscopy in MOCVD[J]. Chinese Journal of Luminescence, 2011,32(12): 1297-1302 DOI:
通过瞬态反射各向异性谱和瞬态反射谱在线监测和研究了Al
x
Ga
1-
x
As的生长过程
利用金属有机化合物汽相淀积技术在GaAs (001)衬底上生长了多层Al
x
Ga
1-
x
As结构。选择最适合在线监测生长过程的探测光能量
在此探测光能量处所得到的反射各向异性谱和反射谱的信号在生长过程中有很明显的振荡行为产生。研究发现
通过瞬态反射各向异性谱可以很好地分辨出由表面引起的光学各向异性和由界面处引起的光学各向异性
能够得到界面处形成缺陷的信息
并且发现了反射各向异性谱和反射谱的信号随着铝组分的不同而发生有规律的变化。
The MOCVD growth of Al
x
Ga
1-
x
As for application in high-power laser diodes was studied by using time resolved reflectance anisotropy spectroscopy (RAS) and normalized reflectance (NR) were studied. Multi-layer Al
x
Ga
1-
x
As structures with different Al compisition were grown on GaAs (001) substrates. The most suitable photon energy for monitoring the growth process was investigated. The NR and RAS signals at photon energy near the fundamental band gap showed an oscillatory behavior during the growth. The different contribution of surface-induced optical anisotropy and interface-induced optical anisotropy could be distinguished in situ by RAS transient spectra. The intensities of the RAS and NR signals were strongly dependent on the aluminium composition.
Peng Biao, Ning Yongqiang, Qin Lin, et al. Polarization characteristics of 980 nm high power vertical cavity surface emitting laser [J]. Chin. J. Lumin. (发光学报), 2008, 29 (5):845-850 (in Chinese).[2] Zhang Yan, Ning Yongqiang, Qin Lin, et al. Design and fabrication of vertical-cavity surface-emitting laser with small divergence [J]. Chin. J. Lumin. (发光学报), 2011, 32 (1):47-52 (in Chinese).[3] Aspnes D E, Studna A A. Anisotropies in the above-band-gap optical spectra of cubic semiconductor [J]. Physical Review Letters, 1985, 54 (17):1956-1959.[4] Zorn M, Weyers M. Application of reflectance anisotropy spectroscopy to laser diode growth in MOVPE [J]. Journal of Crystal Growth, 2005, 276 (1-2):29-36.[5] Bugge F, Zorn M, Zeimer U, et al. MOVPE growth of InGaAs/GaAsP-MQWs for high-power laser diodes studied by reflectance anisotropy spectroscopy [J]. J. Crystal Growth, 2009, 311 (4):1065-1069.[6] Yasuda T. Interface surface and bulk anisotropies of heterostructures [J]. Thin Solid Films, 1998, 313-314 (1-2): 544-551.[7] Hunderi O, Zettler J T, Haberland K. On the AlAs/GaAs (001) interface dielectric anisotropy [J].Thin Solid Film, 2005, 472 (1-2):261-269.[8] Aspnes D E, Harbison J P, Studna A A, et al. Application of reflectance difference spectroscopy to molecular-beam epitaxy growth of GaAs and AlAs [J]. J. Vacuum Science & Technology A, 1988, 6 (3):1327-1332.[9] Haberland K, Hunderi O, Pristovsek M, et al. Ellipsometric and reflectance-anisotropy measurements on rotating samples [J]. Thin Solid Films, 1998, 313-314 (1-2):620-624.[10] Kamiya Itaru, Aspnes D E, Florez L T, et al. Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum [J]. Physical Review B, 1992, 46 (24): 15895-15904.[11] Simcock M N, He L, Pemble M E. The oxidation of GaAs (100) surfaces under atmospheric pressure conditions studied in real time using dynamic reflectance anisotropy spectroscopy at 2.6 and 4 eV [J]. Surface Science, 2006, 600 (23):L309-L312.[12] Gehrsitz S, Reinhart F K, Gourgon C, et al. The refractive index of AlxGa1-xAs below the band gap: Accurate determination and empirical modeling [J]. J. Appl. Phys., 2000, 87 (11):7825-7837.[13] Reinhardt F, Jonsson J, Zorn M, et al. Monolayer growth oscillations and surface structure of GaAs (001) during metalorganic vapor phase epitaxy growth [J]. J. Vac. Sci. Technol. B, 1994, 12 (4):2541-2546.[14] Haberland K, Bhattacharya A, Zorn M, et al. MOVPE growth of (Al,Ga)InP-based laser structures monitored by real-time reflectance anisotropy spectroscopy [J]. J. Electronic Materials, 2000, 29 (4):468-472.[15] Kawai H, Imanaga S, Kaneko K, et al. Complex refractive indices of AlGaAs at high temperatures measured by in situ reflecto-metry during growth by metalorganic chemical vapor deposition [J]. J. Appl. Phys., 1987, 61 (1):328-332.
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