Si基AAO模板法制备尖晶石型ZnAl2O4纳米结构

高波; 张海明; 朱彦君; 李芹; 李菁

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Si基AAO模板法制备尖晶石型ZnAl₂O₄纳米结构

材料合成及性能研究 | 更新时间：2020-08-12

- Si基AAO模板法制备尖晶石型ZnAl₂O₄纳米结构
- Prepared Photocatalytic of Spinel-type ZnAl₂O₄ Using AAO as A Template on Si Substrate
- 发光学报 2011年32卷第12期页码：1243-1246
- 作者机构：
  
  天津工业大学理学院天津,300160
- 作者简介：
- 基金信息：
  
  天津市自然科学基金 (09JCYBJC04400)资助项目()
- DOI：
  中图分类号： O643.36
- 收稿日期：2011-06-14，
  
  修回日期：2011-10-22，
  
  网络出版日期：2011-12-22，
  
  纸质出版日期：2011-12-22
- 稿件说明：
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高波, 张海明, 朱彦君, 李芹, 李菁. Si基AAO模板法制备尖晶石型ZnAl2O4纳米结构[J]. 发光学报, 2011,32(12): 1243-1246

GAO Bo, ZHANG Hai-ming, ZHU Yan-jun, LI Qin, LI Jing. Prepared Photocatalytic of Spinel-type ZnAl2O4 Using AAO as A Template on Si Substrate[J]. Chinese Journal of Luminescence, 2011,32(12): 1243-1246
高波, 张海明, 朱彦君, 李芹, 李菁. Si基AAO模板法制备尖晶石型ZnAl2O4纳米结构[J]. 发光学报, 2011,32(12): 1243-1246 DOI：

GAO Bo, ZHANG Hai-ming, ZHU Yan-jun, LI Qin, LI Jing. Prepared Photocatalytic of Spinel-type ZnAl2O4 Using AAO as A Template on Si Substrate[J]. Chinese Journal of Luminescence, 2011,32(12): 1243-1246 DOI：

摘要

以Si基AAO为模板

以Zn和C粉作蒸发源

通过化学气相沉积法

在不同的温度下反应得到了不同的ZnAl

纳米结构。对样品的形貌和成分结构进行了分析。扫描电镜结果显示

在800 ℃获得的ZnAl

样品表面仍保留着AAO模板的孔洞结构。而XRD结果表明

在700

800

900 ℃下获得的样品都出现了ZnAl

衍射峰

说明ZnAl

已经成功制备。结合SEM图和XRD图可以看出

800 ℃是制备尖晶石型光催化ZnAl

纳米结构的最合适温度。

Abstract

ZnAl

composite structure was fabricated using Zn and C powers by CVD method at different temperature. Structure and optical properties of the composite structure were investigated using scanning electron microscopy (SEM) and X-ray diffraction (XRD). SEM results indicated that the sample of ZnAl

structure prepared at 800 ℃ remained the regular pore structure of AAO template. The XRD patterns demonstrated that the diffraction peaks of the ZnAl

appeared at the reaction temperature of 700

800

900 ℃. That indicated the ZnAl

structures were obtained successfully. The optimum temperature for CVD method fabricated ZnAl

nanostructure was 800 ℃ by the SEM and XRD results.

关键词

Keywords

references

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