MoO3为缓冲层的高效非掺杂蓝色有机发光二极管

倪蔚德; 吴有智; 张文林; 张材荣; 张定军

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MoO₃为缓冲层的高效非掺杂蓝色有机发光二极管

器件制备及器件物理 | 更新时间：2020-08-12

- MoO₃为缓冲层的高效非掺杂蓝色有机发光二极管
- Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO₃ as Anode Buffer Layer
- 发光学报 2011年32卷第12期页码：1271-1275
- 作者机构：
  
  1. 甘肃省有色金属新材料省部共建国家重点实验室, 兰州理工大学材料科学与工程学院,甘肃兰州,730050
  2. 兰州理工大学理学院应用物理系,甘肃兰州,730050
- 作者简介：
- 基金信息：
  
  甘肃省自然科学基金(1010RJZA035)();教育部留学回国人员科研启动基金(第40批)();国家自然科学基金(11164015, 11164016)资助项目()
- DOI：
  中图分类号： TN383.1
- 收稿日期：2011-09-01，
  
  修回日期：2011-10-12，
  
  网络出版日期：2011-12-22，
  
  纸质出版日期：2011-12-22
- 稿件说明：
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倪蔚德, 吴有智, 张文林, 张材荣, 张定军. MoO3为缓冲层的高效非掺杂蓝色有机发光二极管[J]. 发光学报, 2011,32(12): 1271-1275

NI Wei-de, WU You-zhi, ZHANG Wen-lin, ZHANG Cai-rong, ZHANG Ding-jun. Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO3 as Anode Buffer Layer[J]. Chinese Journal of Luminescence, 2011,32(12): 1271-1275
倪蔚德, 吴有智, 张文林, 张材荣, 张定军. MoO3为缓冲层的高效非掺杂蓝色有机发光二极管[J]. 发光学报, 2011,32(12): 1271-1275 DOI：

NI Wei-de, WU You-zhi, ZHANG Wen-lin, ZHANG Cai-rong, ZHANG Ding-jun. Highly Efficient Nondoped Blue Organic Light-emitting Diode Using MoO3 as Anode Buffer Layer[J]. Chinese Journal of Luminescence, 2011,32(12): 1271-1275 DOI：

摘要

以典型蓝色发光材料-联苯乙烯衍生物(4

4'-bis(2

2'-diphenylvinyl)- 1

1'-biphenyl

DPVBi)为发光层

采用MoO

为阳极缓冲层制备了结构简单的非掺杂型蓝色有机电致发光器件。在电流密度为20 mA/cm

、 MoO

缓冲层厚度为0.5 nm对器件效率约为无缓冲层器件效率的18倍

为通常酞菁铜(Copper phthalocyanine

CuPc)缓冲层器件效率的1.2倍。器件启亮电压为3.3 V

最高外量子效率为3.1％

最高亮度达到16 000 cd/m

器件CIE色坐标(Commission Internationale de l'Eclairage co-ordinates)为(0.15

0.15)。器件性能的提升归因于MoO

缓冲层的插入在阳极/有机层间形成了良好的欧姆接触。

Abstract

Contact properties between electrodes and organic layers play a key role for the performance of an organic device. Ohmic contacts at electrode/organic interfaces are required for an ideal device. In order to improve performance of 4

4'-bis(2

2'-diphenylvinyl)-1

1'-biphenyl (DPVBi

a typical blue organic luminescent material) based organic light-emitting diode

MoO

was introduced at anode interface as a buffer layer and a highly efficient bright nondoped blue electroluminescent device with low driving voltage was fabricated. Luminescent efficiency of the device with a 0.5-nm-thick MoO

buffer layer is 18 times higher than that of the device without buffer layer

and 1.2 times higher than that of the device with a conventional copper phthalocyanine (CuPc) buffer layer at a current density of 20 mA/cm

. Turn-on voltage

maximum external quantum efficiency and luminance of the device are 3.3 V

3.1% and 16000 cd/m

respectively. Commission Internationale de l'Eclairage (CIE) co-ordinates are (0.15

0.15). Realization of excellent device performance is attributed to formation of ohmic contact between anode and organics by insertion of MoO

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Keywords

references

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