基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究

王琪; 张金龙; 王立军; 刘云

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基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究

器件制备及器件物理 | 更新时间：2020-08-12

- 基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究
- Dry Etching of InP Material Based on Inductivity Coupled Plasma
- 发光学报 2011年32卷第12期页码：1276-1280
- 作者机构：
  
  1. 中国科学院激发态重点实验室长春光学精密机械与物理研究所,吉林长春,130033
  2. 中国科学院研究生院北京,100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61106047, 61176045, 61106068,51172225)();国家自然科学基金重点项目 (90923037 )资助项目()
- DOI：
  中图分类号： TN248.4
- 收稿日期：2011-07-24，
  
  修回日期：2011-09-21，
  
  网络出版日期：2011-12-22，
  
  纸质出版日期：2011-12-22
- 稿件说明：
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王琪, 张金龙, 王立军, 刘云. 基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究[J]. 发光学报, 2011,32(12): 1276-1280

WANG Qi, ZHANG Jin-long, WANG Li-jun, LIU Yun. Dry Etching of InP Material Based on Inductivity Coupled Plasma[J]. Chinese Journal of Luminescence, 2011,32(12): 1276-1280
王琪, 张金龙, 王立军, 刘云. 基于电感耦合等离子体的InP基半导体材料干法刻蚀的研究[J]. 发光学报, 2011,32(12): 1276-1280 DOI：

WANG Qi, ZHANG Jin-long, WANG Li-jun, LIU Yun. Dry Etching of InP Material Based on Inductivity Coupled Plasma[J]. Chinese Journal of Luminescence, 2011,32(12): 1276-1280 DOI：

摘要

研究了基于电感耦合等离子体(ICP)刻蚀系统的InP基半导体材料的干法刻蚀。采用Cl

/Ar/H

混合刻蚀气体

分别研究了氯气体积分数和ICP功率与刻蚀速率之间的关系

及镍、二氧化硅和二者结合型掩膜版的适用范围。获得有效的刻蚀速率为450～1200 nm/min

InP对金属镍的选择性刻蚀比值为175～190。掩膜版的选择与制备方法适用于基于ICP系统的任何半导体材料的干法刻蚀工艺。

Abstract

Dry etching of InP material based on inductivity coupled plasma(ICP) was thoroughly studied

/Ar/H

gas mixture was adopted

and the etching depth could reach 10 m with a vertical and a smooth surface. The gas percentages of the total gas versus etching rate

and the applicable regions of Ni

SiO

and the combination of Ni and SiO

were studied

respectively. The regions of the effective etching rate and selectivity against Ni are 450~1200 nm/min and 175~190

respectively. The choosing and fabrication approaches adopted are highly suitable for any semiconductor material based on ICP system.

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references

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