具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性

王小丽; 王文新; 江洋; 马紫光; 崔彦翔; 贾海强; 宋京; 陈弘

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具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性

器件制备及器件物理 | 更新时间：2020-08-12

- 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性
- Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures
- 发光学报 2011年32卷第11期页码：1152-1158
- 作者机构：
  
  1. 中国科学院物理研究所清洁能源前沿研究重点实验室北京,100190
  2. 天津中环新光科技有限公司天津,300385
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60877006,60890192/F0404,50872146);科技部"973"计划(2010CB327501)资助项目
- DOI：
  中图分类号： O482.31
- 收稿日期：2011-05-19，
  
  修回日期：2011-06-30，
  
  网络出版日期：2011-11-22，
  
  纸质出版日期：2011-11-22
- 稿件说明：
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王小丽, 王文新, 江洋, 马紫光, 崔彦翔, 贾海强, 宋京, 陈弘. 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J]. 发光学报, 2011,32(11): 1152-1158

WANG Xiao-li, WANG Wen-xin, JIANG Yang, MA Zi-guang, CUI Yan-xiang, JIA Hai-qiang, SONG Jing, CHEN Hong. Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures[J]. Chinese Journal of Luminescence, 2011,32(11): 1152-1158
王小丽, 王文新, 江洋, 马紫光, 崔彦翔, 贾海强, 宋京, 陈弘. 具有超晶格应力调制结构的绿光InGaN/GaN多量子阱的发光特性[J]. 发光学报, 2011,32(11): 1152-1158 DOI：

WANG Xiao-li, WANG Wen-xin, JIANG Yang, MA Zi-guang, CUI Yan-xiang, JIA Hai-qiang, SONG Jing, CHEN Hong. Luminescent Performances of Green InGaN/GaN MQW LED Employing Superlattices Strain Adjusting Structures[J]. Chinese Journal of Luminescence, 2011,32(11): 1152-1158 DOI：

摘要

研究了具有InGaN/GaN超晶格(SL)插入结构的绿光InGaN/GaN多量子阱(MQW)的发光特性。结构测试表明

SL插入结构并没有引起MQW中平均In组份的增加

而是改变了In组份的分布

形成了高In组份的量子点和低In组份量子阱。其电致发光(EL)谱和光致发光(PL)谱均出现了双发光峰。我们认为这两个峰分别来自于量子点和量子阱

且存在着载流子从阱向点转移的输运机制。最后变温PL积分强度的Arrhenius 拟合表明

SL插入结构并没有在MQW中引入新的缺陷

使其发光效率下降。

Abstract

Green InGaN/GaN multiple quantum well(MQW) LEDs employing InGaN/GaN superlattice(SL) structure were studied. The distribution of indium within the MQWs is changed by inserting the InGaN/GaN SL. Meanwhile

the average indium content of MQW does not change. Two InGaN-related peaks that were clearly found in the electroluminescence(EL) and photoluminescence(PL) spectrum

which are assigned to In-rich quantum dots(QD) and the InGaN matrix

respectively. It is suggested that the carrier drifts from the InGaN matrix to the In-rich QD. It could be concluded that employing SL structures is an effective way to adjust the wavelength of InGaN/GaN MQW without introducing new defects in the MQWs.

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references

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