薄膜热处理对ZnO薄膜晶体管性能的提高

张浩; 张良; 李俊; 蒋雪茵; 张志林; 张建华

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薄膜热处理对ZnO薄膜晶体管性能的提高

器件制备及器件物理 | 更新时间：2020-08-12

- 薄膜热处理对ZnO薄膜晶体管性能的提高
- Improvment of ZnO-TFT Performance by Annealing ZnO Film
- 发光学报 2011年32卷第12期页码：1281-1285
- 作者机构：
  
  1. 上海大学机电工程与自动化学院上海,200072
  2. 上海大学材料学院上海,200072
  3. 上海大学新型显示技术与应用集成教育部重点实验室上海,200072
- 作者简介：
- 基金信息：
  
  国家863计划(2010AA03A337)();上海市科委(09DZ2292901)资助项目()
- DOI：
  中图分类号： TN321.5
- 收稿日期：2011-09-25，
  
  修回日期：2011-10-24，
  
  网络出版日期：2011-12-22，
  
  纸质出版日期：2011-12-22
- 稿件说明：
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张浩, 张良, 李俊, 蒋雪茵, 张志林, 张建华. 薄膜热处理对ZnO薄膜晶体管性能的提高[J]. 发光学报, 2011,32(12): 1281-1285

ZHANG Hao, ZHANG Liang, LI Jun, JIANG Xue-yin, ZHANG Zhi-lin, ZHANG Jian-hua. Improvment of ZnO-TFT Performance by Annealing ZnO Film[J]. Chinese Journal of Luminescence, 2011,32(12): 1281-1285
张浩, 张良, 李俊, 蒋雪茵, 张志林, 张建华. 薄膜热处理对ZnO薄膜晶体管性能的提高[J]. 发光学报, 2011,32(12): 1281-1285 DOI：

ZHANG Hao, ZHANG Liang, LI Jun, JIANG Xue-yin, ZHANG Zhi-lin, ZHANG Jian-hua. Improvment of ZnO-TFT Performance by Annealing ZnO Film[J]. Chinese Journal of Luminescence, 2011,32(12): 1281-1285 DOI：

摘要

制备了两种以SiO

为绝缘层的底栅ZnO薄膜晶体管

分别以未退火和退火处理的ZnO薄膜作为有源层。与未退火处理的ZnO薄膜晶体管相比

退火处理的ZnO薄膜晶体管的饱和迁移率由2.3 cm

/(Vs)增大至3.12 cm

/(Vs)

阈值电压由20.8 V 减小至9.9 V

亚阈值摆幅由2.6 V/dec 减小至 1.9 V/dec。25 V直流电压施加3600 s后

未退火器件的阈值电压变化达到8 V

而退火处理的器件的阈值电压变化仅为3.4 V。实验结果表明

对有源层退火处理有利于提升ZnO-TFT器件的电学性能和偏压稳定性。

Abstract

The bottom gate thin-film transistors (TFTs) with un-annealed and annealed ZnO film as a channel layer were fabricated. Compared with the un-annealed device

the performance of the device with annealed ZnO had been improved. The saturation mobility increased from 2.3 to 3.12 cm

/(Vs)

the threshold voltage reduced from 20.8 to 9.9 V

the threshold swing varied from 2.6 to 1.9 V/dec

and the threshold voltage shifted from 8.0 to 3.4 V after applying a gate bias stress of 25 V for 3 600 s. The experimental results indicate that using annealed ZnO film as channel layer is an effective approach for improving ZnO-based TFT performance and bias stress stability.

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references

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