掺铕钼酸钆荧光粉的制备与发光性能分析

冯文林; 李铁; 陈志; 张盈; 曾超; 杨蕾

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掺铕钼酸钆荧光粉的制备与发光性能分析

材料合成及性能研究 | 更新时间：2020-08-12

- 掺铕钼酸钆荧光粉的制备与发光性能分析
- Synthesis and Luminescent Properties of Eu³⁺ Doped Ga₂(MoO₄)₃ Phosphors
- 发光学报 2011年32卷第11期页码：1143-1146
- 作者机构：
  
  1. 重庆理工大学光电信息学院, 重庆 400054
  2. 重庆理工大学化工学院重庆,400054
  3. 重庆大学光电工程学院重庆,400044
  4. 中国科学院国际材料物理中心,辽宁沈阳,110016
- 作者简介：
- 基金信息：
  
  中国博士后基金(20100470811);重庆市科委项目(cstcjjA50005);重庆理工大学科研创新团队项目资助
- DOI：
  中图分类号： O482.31
- 收稿日期：2011-07-28，
  
  修回日期：2011-08-24，
  
  网络出版日期：2011-11-22，
  
  纸质出版日期：2011-11-22
- 稿件说明：
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冯文林, 李铁, 陈志, 张盈, 曾超, 杨蕾. 掺铕钼酸钆荧光粉的制备与发光性能分析[J]. 发光学报, 2011,32(11): 1143-1146

FENG Wen-lin, LI Tie, CHEN Zhi, ZHANG Yin, ZENG Cao, YANG Lei. Synthesis and Luminescent Properties of Eu3+ Doped Ga2(MoO4)3 Phosphors[J]. Chinese Journal of Luminescence, 2011,32(11): 1143-1146
冯文林, 李铁, 陈志, 张盈, 曾超, 杨蕾. 掺铕钼酸钆荧光粉的制备与发光性能分析[J]. 发光学报, 2011,32(11): 1143-1146 DOI：

FENG Wen-lin, LI Tie, CHEN Zhi, ZHANG Yin, ZENG Cao, YANG Lei. Synthesis and Luminescent Properties of Eu3+ Doped Ga2(MoO4)3 Phosphors[J]. Chinese Journal of Luminescence, 2011,32(11): 1143-1146 DOI：

摘要

通过共沉淀法制备了红色荧光粉Gd

(MoO

)

并采用X射线衍射(XRD)、扫描电子显微镜(SEM)和荧光光谱对所制备的样品进行结构表征分析

讨论了不同掺杂量下合成的荧光材料的发光性质。研究结果表明:所制备的Gd

(MoO

)

红色荧光粉的三处激发峰分别位于394

465

534 nm。发射光谱中在589 nm和613 nm处有很强的发射峰

其中最强发射峰位于613 nm左右

与Eu

的

跃迁对应。随着Eu

掺杂量的增加

所合成的荧光粉的发光强度逐渐增强。在三组实验结果中

1.4

0.6

(MoO

)

(

=0.6)的发光强度最强。

Abstract

(MoO

)

red phosphors are synthesized by using co-precipitation method. X-ray diffraction (XRD)

scanning electron microscopy (SEM) and fluorescence spectrum are used to characterize the structure and luminescent property of the samples. The luminescent properties of Gd

(MoO

)

with various concentration of Eu

are investigated in detail. The results show that three dominant bands locate at 394

465

534 nm. The emission spectra exhibit the most intense emission at 589 nm and 613 nm

especially the later which is corresponding to the

transition of the Eu

. With the increase of the concentration of Eu

the luminescent intensity of the phosphors is gradually increased. When

=0.6 (

i.e.

1.4

0.6

-(MoO

)

the luminescent intensity of the red phosphor is the strongest.

关键词

Keywords

references

Wang J J, Yin H B, Wang F, et al. Study on properties of Gd2(MoO4)3∶Eu3+ doped with Bi3+ and Y3+ [J]. Mater. Rev. (材料导报), 2008, 22 (z3):124-126 (in Chinese).[2] Zhang W P, Yin M. Preparation and properties of nanometric scale luminescent materials doped by rare earth [J]. Chin. J. Lumin. (发光学报), 2000, 21 (4):314-319 (in Chinese).[3] Zhang G Y, Zhao X X, Meng Q Y, et al. Preparation and properties of red emitting phosphor Gd2Mo3O9∶Eu3+ for white LEDs [J]. Chin. J. Lumin. (发光学报), 2007, 28 (1):57-61 (in Chinese).[4] Lei B F, Sha L, Liu Y L, et al. Synthesis of nano-sized Sr2SiO4∶Eu3+ phosphor by combustion method and its luminescence properties [J]. Chin. J. Lumin. (发光学报), 2011, 32 (6):535-541 (in Chinese).[5] Liu L, Yuan X M, Xie A, et al. Synthesis and Luminescent properties of Eu3+-activated novel borate-based red-emitting phosphors for white LED [J]. Chin. J. Lumin. (发光学报), 2011, 32 (7):686-692 (in Chinese).[6] Yang Y L, Li X M, Feng W L, et al. Synthesis and characteristic of CaMoO4∶Eu3+ red phosphor for W-LED by co-precipitation [J]. J. Inorg. Mater., 2011, 27 (10):276-280 (in Chinese).[7] Yang Y L, Li X M, Feng W L, et al. Effect of surfactants on morphology and luminescent properties of CaMoO4∶Eu3+ red phosphors [J]. J. Alloys Compd., 2011, 509 (3):845-848.[8] Wenst R C. CRC Handbook of Chemistry and Physics [M]. Roca Raton: CRC Press, 1989:F-187.[9] Wang Z L. Luminescence of (Li0.333Na0.334K0.333)Eu(MoO4)2 and its application in near UV InGaN-based light-emitting diode [J]. Chem. Phys. Lett., 2005, 46 (4-6):313-316.[10] Zhang G Y, Zhao X X, Meng Q Y, et al. Synthesis and characterization of Eu3+ doped -Gd2(MoO4)3 phosphor [J]. Chin. J. Lumin. (发光学报), 2006, 27 (5):724-728 (in Chinese).

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