高效率半导体激光器光纤耦合模块

朱洪波; 刘云; 郝明明; 单肖楠; 付喜宏; 张金龙; 王立军

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高效率半导体激光器光纤耦合模块

器件制备及器件物理 | 更新时间：2020-08-12

- 高效率半导体激光器光纤耦合模块
- High Efficiency Module of Fiber Coupled Diode Laser
- 发光学报 2011年32卷第11期页码：1147-1151
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所, 吉林长春 130033
- 作者简介：
- 基金信息：
  
  国家"863"计划(0069AA032705);吉林省科技厅重大项目(10ZDGG001);广东省院地合作项目(2009A091100021)资助项目
- DOI：
  中图分类号： TN248.4
- 收稿日期：2011-05-13，
  
  修回日期：2011-06-28，
  
  网络出版日期：2011-11-22，
  
  纸质出版日期：2011-11-22
- 稿件说明：
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朱洪波, 刘云, 郝明明, 单肖楠, 付喜宏, 张金龙, 王立军. 高效率半导体激光器光纤耦合模块[J]. 发光学报, 2011,32(11): 1147-1151

ZHU Hong-bo, LIU Yun, HAO Ming-ming, SAN Xiao-nan, FU Xi-hong, ZHANG Jin-long, WANG Li-jun. High Efficiency Module of Fiber Coupled Diode Laser[J]. Chinese Journal of Luminescence, 2011,32(11): 1147-1151
朱洪波, 刘云, 郝明明, 单肖楠, 付喜宏, 张金龙, 王立军. 高效率半导体激光器光纤耦合模块[J]. 发光学报, 2011,32(11): 1147-1151 DOI：

ZHU Hong-bo, LIU Yun, HAO Ming-ming, SAN Xiao-nan, FU Xi-hong, ZHANG Jin-long, WANG Li-jun. High Efficiency Module of Fiber Coupled Diode Laser[J]. Chinese Journal of Luminescence, 2011,32(11): 1147-1151 DOI：

摘要

随着半导体激光光源在激光加工领域的应用不断扩展

以激光二极管阵列制成的光纤耦合模块由于存在耦合效率低的缺点

已不能满足激光加工低成本的需求

因此研制高耦合效率的半导体激光器光纤耦合模块变得十分重要。本文将8只波长为808 nm、输出功率为5 W的单管半导体激光器通过合束技术耦合进光纤

制备了一种高效率的半导体激光器光纤耦合模块。光纤芯径为200 m、数值孔径(

A)为0.22

光纤输出功率为33.2W

耦合效率超过83%

这种高效率半导体激光器光纤耦合模块

可用于激光打标、塑料加工等领域。

Abstract

With the increase of LD application in the field of laser processing

the efficiency of the fiber coupled modular based on diode laser arrays is rather low

which can not meet the need of low costing for laser processing

so it is very important to develop a higher efficiency modular of fiber coupled diode lasers. In this paper

we achieved a higher efficiency fiber coupled module based on 8 single emitter diode lasers providing more than 32.4 W output power from a 200 microns fiber core with an numerical aperture(

) of 0.22 at 808 nm. Power of each LD can reach to 5 Watts at operation current. More than 83% coupling efficiency of the modular has been realized. This high power LD module can be used in laser plastics processing and laser meclical treatment fields.

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references

Gu Yuanyuan, Feng Guangzhi, Deng Xinli, et al. 808 nm and 980 nm high power laser diode stack with wavelength coupling [J]. Optics and Precision Engineering (光学精密工程), 2009, 17 (1):8-13 (in Chinese).[2] Friedheim Dorsch, Franz X Daiminger, Petra Hennig, et al. 2 kW cw fiber-coupled diode laser system [J]. SPIE, 2000, 3889 :45-53.[3] Yang Ye, Liu Yun, Qin Li, et al. Electro-optic properties of 850 nm high-brightness tapered lasers [J]. Chin. J. Lumin.(发光学报), 2011, 32 (6):593-597 (in Chinese).[4] Feng Guangzhi, Gu Yuanyuan, San Xiaonan, et al. 808 nm high power diode laser stack with polarization coupling [J]. Chin. J. Lumin.(发光学报), 2009, 29 (4):695-700 (in Chinese).[5] Wang Xiangpeng, Li Zaijin, Wang Lijun, et al. Smile effect and package technique for diode laser arrays [J]. Optics and Precision Engineering (光学精密工程), 2010, 18 (1):553-557 (in Chinese).[6] Wessling C, Hengesbach S, Geiger J, et al. 50 W passively cooled, fiber coupled diode laser at 976 nm for pumping fiber lasers using 100 m fiber bundles [J]. SPIE, 2008, 6876 :687614-1-11.[7] Liu Guojun, Bo Baoxue, Ma Xiaohui. et al. Study on high power semiconductor laser arrays and output beam shaping [J]. SPIE, 2009, 7382 :738207-1-11.[8] Schroder D, Werner E, Franke A, et al. Roadmap to low cost, high brightness diode laser power out of the fiber [J]. SPIE, 2010, 7583 :758309-1-7.[9] Pierer J, Grossmann S, Spinola Durante G, et al. Automated assembly processes of high power single emitter diode lasers for 100 W in 105 m/NA 0.15 fiber module [J]. SPIE, 2011, 7918 :791801-1-8.[10] Kirk Price, Frank Pfeffer, Paul Leisher, et al. KW-class industrial diode lasers comprised of single emitters [J]. SPIE, 2010, 7583 :75830E-1-9.[11] David Havrilla, Marco Holzer, Dr Rdiger Brockmann, et al. Dramatic advances in direct diode lasers [J]. SPIE, 2010, 7583 :75830B-1-6.[12] Marcel Werner, Christian Wessling, Stefan Hengesbach, et al. 100 W/100 m passively cooled, fiber coupled diode laser at 976 nm based on multiple 100 m single emitters [J]. SPIE, 2009, 7198 :71980P-1-7.

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