超薄氢化非晶锗膜的结构与光电性质

李悰; 徐骏; 林涛; 李伟; 李淑鑫; 陈坤基

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超薄氢化非晶锗膜的结构与光电性质

器件制备及器件物理 | 更新时间：2020-08-12

- 超薄氢化非晶锗膜的结构与光电性质
- Structural,Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films
- 发光学报 2011年32卷第11期页码：1165-1170
- 作者机构：
  
  南京大学物理学院固体微结构物理国家重点实验室电子科学与工程学院, 江苏南京 210093
- 作者简介：
- 基金信息：
  
  江苏省自然科学基金(BK2010010);中央高校基本科研业务费专项资金(1112021001)资助项目
- DOI：
  中图分类号： O472+.3
- 收稿：2011-08-09，
  
  修回：2011-8-31，
  
  网络出版：2011-11-22，
  
  纸质出版：2011-11-22
- 稿件说明：
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李悰, 徐骏, 林涛, 李伟, 李淑鑫, 陈坤基. 超薄氢化非晶锗膜的结构与光电性质[J]. 发光学报, 2011,32(11): 1165-1170

LI Cong, XU Jun, LIN Tao, LI Wei, LI Shu-xin, CHEN Kun-ji. Structural,Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films[J]. Chinese Journal of Luminescence, 2011,32(11): 1165-1170
李悰, 徐骏, 林涛, 李伟, 李淑鑫, 陈坤基. 超薄氢化非晶锗膜的结构与光电性质[J]. 发光学报, 2011,32(11): 1165-1170 DOI：

LI Cong, XU Jun, LIN Tao, LI Wei, LI Shu-xin, CHEN Kun-ji. Structural,Eelectronic and Optical Properties of Ultra-thin Hydrogenated Amorphous Germanium Films[J]. Chinese Journal of Luminescence, 2011,32(11): 1165-1170 DOI：

摘要

通过PECVD制备出了不同厚度的a-Ge∶H膜

采用Raman光谱对样品进行了结构表征

由椭圆偏振光谱仪得到样品的厚度和光学常数

并计算了样品的光学带隙。由变温电导率分析了薄膜的电学输运性质

结果表明

载流子的传输机制为扩展态电导。进而利用变温PL谱研究了薄膜的发光性能

发现其发光峰在1.63 m处;随着膜厚的减小

峰位和峰形都有改变

且强度明显提高。进一步分析发现

随着膜厚的减小非辐射复合跃迁的激活能增大

从而导致辐射复合过程增强。

Abstract

Ultra-thin hydrogenated amorphous germanium films

with various thickness from 160 nm to 5 nm were grown by plasma enhanced chemical vapor deposition technique. The film structure was characterized by Raman spectroscopy

which exhibited a broad band centered around 280 cm

-1

indicating their amorphous nature. The film thickness and optical properties were evaluated by ellipsometer spectroscopy. The measured thickness was well consistent with the pre-designed value and the optical band gap was about 1 eV which slightly increased with the decrease of film thickness. The temperature dependent conductivity of the films was measured. The electronic transport was believed to occur in the extended-states and the corresponding activation energy is about 0.3~0.4 eV. The light emission in infrared region from the films can be detected at low temperature. The sample for 160 nm had a broad luminescence band which can be divided into two sub-bands centered at 0.78 eV and 0.67 eV

respectively. By decreasing the films thickness less than 10 nm

the luminescence band beaome narrower and only a band at 0.8 eV was observed. It may be due to the relatively more hydrogen in the ultrathin films

which passivated the defect states and suppressed the defect-related luminescence. The non-radiative activation energy increased in ultrathin films suggesting the improved efficiency.

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references

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