F16CuPc作为阳极缓冲层对有机太阳能电池性能的显著改善

刘亚东; 苏子生; 庄陶钧; 初蓓; 李文连

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F₁₆CuPc作为阳极缓冲层对有机太阳能电池性能的显著改善

器件制备及器件物理 | 更新时间：2020-08-12

- F₁₆CuPc作为阳极缓冲层对有机太阳能电池性能的显著改善
- Significant Enhanced Performance of Organic Solar Cells with F₁₆CuPc as The Anode Buffer Layer
- 发光学报 2011年32卷第11期页码：1176-1180
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院激发态物理重点实验室长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60877027,61076047,11004187)资助项目
- DOI：
  中图分类号： O631.2+3
- 收稿：2011-08-09，
  
  修回：2011-9-7，
  
  网络出版：2011-11-22，
  
  纸质出版：2011-11-22
- 稿件说明：
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刘亚东, 苏子生, 庄陶钧, 初蓓, 李文连. F16CuPc作为阳极缓冲层对有机太阳能电池性能的显著改善[J]. 发光学报, 2011,32(11): 1176-1180

LIU Ya-dong, SU Zi-sheng, ZHUANG Tao-jun, CHU Bei, LI Wen-lian. Significant Enhanced Performance of Organic Solar Cells with F16CuPc as The Anode Buffer Layer[J]. Chinese Journal of Luminescence, 2011,32(11): 1176-1180
刘亚东, 苏子生, 庄陶钧, 初蓓, 李文连. F16CuPc作为阳极缓冲层对有机太阳能电池性能的显著改善[J]. 发光学报, 2011,32(11): 1176-1180 DOI：

LIU Ya-dong, SU Zi-sheng, ZHUANG Tao-jun, CHU Bei, LI Wen-lian. Significant Enhanced Performance of Organic Solar Cells with F16CuPc as The Anode Buffer Layer[J]. Chinese Journal of Luminescence, 2011,32(11): 1176-1180 DOI：

摘要

采用F

CuPc作为有机太阳能电池的阳极缓冲层可使器件的性能得到显著提高。F

CuPc的引入

一方面可以实现CuPc分子的定向生长

从而改善CuPc薄膜的结晶度

提高其空穴迁移率;另一方面在F

CuPc/CuPc界面处可形成偶极层

改善空穴的输出效率。以上两个作用有效提高了器件的载流子收集效率

降低了器件的串联电阻和光生载流子复合几率

从而提高了器件的短路电流和填充因子。同时

CuPc的引入使器件的内建电场增大

提高了器件的开路电压。

Abstract

Significant enhanced performance of organic solar cells with F

CuPc as the anode buffer layer was demonstrated. On the one hand

the adopted F

CuPc anode buffer layer leads to the oriented growth of the CuPc molecules

resulting in the increased crystallinity and hence the hole mobility of the CuPc film. On the other hand

a dipole layer can be formed in the F

CuPc/CuPc interface

which can improve the hole extraction efficiency from CuPc to ITO. Owing to these tow effects

the charge carriers collection efficiency was raised

while the series resistance and the photogenerated charge carrier recombination probability were decreased. Consequently

the short-circuit current and the fill factor were increased. Meanwhile

the built-in potential of the devices was also increased by the introduction of F

CuPc

leading to an increased open-circuit voltage.

关键词

Keywords

references

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