热处理对立方相结构Mg0.57Zn0.43O 合金薄膜表面和组成的影响

曹建明; 秦杰明; 张振中; 王立昆; 郑剑; 韩舜; 赵延民; 张炳烨; 张吉英; 申德振

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热处理对立方相结构Mg_0.57Zn_0.43O 合金薄膜表面和组成的影响

材料合成及性能研究 | 更新时间：2020-08-12

- 热处理对立方相结构Mg_0.57Zn_0.43O 合金薄膜表面和组成的影响
- Annealing Effect on Smoothness and Composition of Cubic-phase Mg_0.57Zn_0.43O Thin Film
- 发光学报 2011年32卷第10期页码：973-976
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 长春理工大学材料科学与工程学院,吉林长春,130022
  3. 中国科学院激发态物理重点实验室, 长春光学精密机械与物理研究所,吉林长春,130033
- 作者简介：
- 基金信息：
  
  国家"();973"();计划(2011CB302006)();国家自然科学基金(10974197,60806002)();中国科学院BR计划资助项目()
- DOI：
  中图分类号： O472.1;O484.4+1
- 收稿日期：2010-08-25，
  
  修回日期：2010-11-15，
  
  网络出版日期：2011-10-22，
  
  纸质出版日期：2011-10-22
- 稿件说明：
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曹建明, 秦杰明, 张振中, 王立昆, 郑剑, 韩舜, 赵延民, 张炳烨, 张吉英, 申德振. 热处理对立方相结构Mg0.57Zn0.43O 合金薄膜表面和组成的影响[J]. 发光学报, 2011,32(10): 973-976

CAO Jian-ming, QIN Jie-ming, ZHANG Zhen-zhong, WANG Li-kun, ZHENG Jian, HAN Shun, ZHAO Yan-min, ZHANG Bing-ye, ZHANG Ji-ying, SHEN De-zhen. Annealing Effect on Smoothness and Composition of Cubic-phase Mg0.57Zn0.43O Thin Film[J]. Chinese Journal of Luminescence, 2011,32(10): 973-976
曹建明, 秦杰明, 张振中, 王立昆, 郑剑, 韩舜, 赵延民, 张炳烨, 张吉英, 申德振. 热处理对立方相结构Mg0.57Zn0.43O 合金薄膜表面和组成的影响[J]. 发光学报, 2011,32(10): 973-976 DOI：

CAO Jian-ming, QIN Jie-ming, ZHANG Zhen-zhong, WANG Li-kun, ZHENG Jian, HAN Shun, ZHAO Yan-min, ZHANG Bing-ye, ZHANG Ji-ying, SHEN De-zhen. Annealing Effect on Smoothness and Composition of Cubic-phase Mg0.57Zn0.43O Thin Film[J]. Chinese Journal of Luminescence, 2011,32(10): 973-976 DOI：

摘要

MgZnO合金具有可覆盖日盲紫外波段的禁带宽度和晶格匹配的单晶衬底

是理想的日盲紫外探测材料。由于MgO和ZnO分属立方相和六角相

分相问题使高质量单一相MgZnO难以获得。热处理是提高薄膜结晶质量的有效手段。利用MOCVD方法制备了单一立方相Mg

0.57

0.43

O合金薄膜

研究了薄膜的退火行为对薄膜结构和光学性能的影响。研究发现

450 ℃的原生样品经过550

650

750

850 ℃氧气氛退火后

薄膜的结晶特性和表面形貌得到明显的改善。随着退火温度的增加

薄膜吸收截止边逐渐蓝移

带隙展宽。X光电子能谱分析发现

随着退火温度增加

Zn含量逐渐减小

这种现象被归结为组分蒸汽压的差异。在退火温度达到950 ℃时

样品发生了分相

出现了低Mg含量的六角相MgZnO。

Abstract

Annealing behavior for cubic-phase Mg

0.57

0.43

O thin films grown at 450 ℃ by metal-organic chemical vapor deposition were studied. After annealed at 550

650

750 and 850 ℃ in oxygen atmospheres

the crystal quality and surface smoothness of the thin films were improved significantly. Their bandgap shifts continuously to the higher energy the increasing annealing temperature. Confirmed by energy dispersive X-ray spectra

the enlarged bandgap was caused by the decrease of Zn content during annealing. Phase separation of the Mg

0.57

0.43

O films with significant surface roughening can also be observed during annealing at 950 ℃.

关键词

Keywords

references

Li G R, Qin Z X, Sang L W, et al. Fabrication and characterization of GaN based p-i-n avalanche photodetectors [J]. Chin. J. Lumin. (发光学报) , 2011, 32 (3):262-265 (in Chinese).[2] Tut T, Gokkavas M, Inal A, et al. AlxGa1-xN-based avalanche photodiodes with high reproducible avalanche gain [J]. Appl. Phys. Lett., 2007, 90 (16):163506-1-3.[3] Adivarahan V, Simin G, Tamulaitis G, et al. Indium-silicon co-doping of high-aluminum-content AlGaN for solar blind photodetectors[J]. Appl. Phys. Lett., 2001, 79 (12):1903-1905.[4] Kuryatkov V V, Temkin H, Campbell J C, et al. Low-noise photodetectors based on heterojunctions of AlGaN-GaN [J]. Appl. Phys. Lett., 2001, 78 (21):3340-3342.[5] Huang J, Wang L J, Tang K, et al. Ultraviolet detector based on ZnO/diamond film heterojunction diode [J]. Chin. J. Lumin. (发光学报), 2011, 32 (3):272-276 (in Chinese).[6] Vashaei Z, Minegishi T, Uzuki H, et al. Structural variation of cubic and hexagonal MgxZn1-xO layers grown on MgO(111)/c-sapphire [J]. J. Appl. Phys., 2005, 98 (5):054911-1-4.[7] Choopun S, Vispute R D, Yang W, et al. Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J]. Appl. Phys. Lett., 2002, 80 (9):1529-1531.[8] Ju Z G, Shan C X, Jiang Y, et al. MgxZn1-xO-based photodetectors covering the whole solar-blind spectrum range [J]. Appl. Phys. Lett., 2008, 93 (17):173505-1-3.[9] Zhong Z, Sun L J, Xu X Q, et al. Effect of high temperature annealing in nitrogen on the luminescence property of ZnO films [J]. Chin. J. Lumin. (发光学报), 2010, 31 (3):359-363 (in Chinese).[10] Ju Z G, Shan C X, Yang C L, et al. Phase stability of cubic Mg0.55Zn0.45O thin film studied by continuous thermal annealing method [J]. Appl. Phys. Lett., 2009, 94 (10):101902-1-3.[11] Liu W S, Gu H L, Zhu S M, et al. The deposition and annealing study of MOCVD ZnMgO [J]. J. Crystal Growth, 2005, 277 (1-4):416-421.[12] Ohtomo A, Shiroki R, Ohkubo I, et al. Thermal stability of supersaturated MgxZn1-xO alloy films and MgxZn1-xO/ZnO heterointerfaces [J]. Appl. Phys. Lett., 1999, 75 (26):4088-4090.[13] Banyai L, Koch S W. Semiconductor Quantum Dots, World Scientific Series on Atomic, Moleculor and Optical Physics [M]. Second Revised. Singapore: World Scientific, 1993:97-102.[14] Chen Y W, Liu Y C, Lu S X, et al. Photoelectric properties of ZnO: In nanorods/SiO2/Si heterostructure assembled in aqueous solution [J]. Appl. Phys. B, 2006, 84 (3):507- 510.

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