SiNx 插入层的生长位置对GaN外延薄膜性质的影响

马紫光; 王文新; 王小丽; 陈耀; 徐培强; 江洋; 贾海强; 陈弘

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SiN_x 插入层的生长位置对GaN外延薄膜性质的影响

材料合成及性能研究 | 更新时间：2020-08-12

- SiN_x 插入层的生长位置对GaN外延薄膜性质的影响
- The Optical and Electrical Properties of GaN Epitaxial Films with SiN_x Interlayers Inserted at Different Position
- 发光学报 2011年32卷第10期页码：1014-1019
- 作者机构：
  
  中国科学院物理研究所北京凝聚态物理国家实验室北京,100190
- 作者简介：
- 基金信息：
  
  国家自然科学基金(5087214, 60890192/F0404)();科技部"();973"();项目(2010CB327501)资助项目()
- DOI：
  中图分类号： O472
- 收稿日期：2011-05-02，
  
  修回日期：2011-05-30，
  
  网络出版日期：2011-10-22，
  
  纸质出版日期：2011-10-22
- 稿件说明：
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马紫光, 王文新, 王小丽, 陈耀, 徐培强, 江洋, 贾海强, 陈弘. SiNx 插入层的生长位置对GaN外延薄膜性质的影响[J]. 发光学报, 2011,32(10): 1014-1019

MA Zi-guang, WANG Wen-xin, WANG Xiao-li, CHEN Yao, XU Pei-qiang, JIANG Yang, JIA Hai-qiang, CHEN Hong. The Optical and Electrical Properties of GaN Epitaxial Films with SiNx Interlayers Inserted at Different Position[J]. Chinese Journal of Luminescence, 2011,32(10): 1014-1019
马紫光, 王文新, 王小丽, 陈耀, 徐培强, 江洋, 贾海强, 陈弘. SiNx 插入层的生长位置对GaN外延薄膜性质的影响[J]. 发光学报, 2011,32(10): 1014-1019 DOI：

MA Zi-guang, WANG Wen-xin, WANG Xiao-li, CHEN Yao, XU Pei-qiang, JIANG Yang, JIA Hai-qiang, CHEN Hong. The Optical and Electrical Properties of GaN Epitaxial Films with SiNx Interlayers Inserted at Different Position[J]. Chinese Journal of Luminescence, 2011,32(10): 1014-1019 DOI：

摘要

系统研究了纳米量级的多孔SiN

插入层生长位置对高质量GaN外延薄膜性质的影响。高分辨X射线衍射测量结果表明:SiN

插入层生长在GaN粗糙层上能够得到最好的晶体质量。利用测量结果分别计算出了螺位错和刃位错的密度。此外

GaN薄膜的光学、电学性质分别用Raman散射能谱、低温光致发光能谱和霍尔测量的方法进行了表征。实验发现:SiN

插入层的生长位置对GaN薄膜的应变大小基本没有影响;但插入层的位置改变了薄膜中的本征载流子浓度。

Abstract

GaN films with SiN

interlayer were grown on sapphire substrates by metal organic chemical vapor deposition. The effect of nanoporous SiN

interlayer growth position on the properties of high-quality GaN epitaxial films was investigated systematically. The high-resolution X-ray diffraction spectra was achieved when a SiN

interlayer was adopted and inserted on a rough GaN layer. The screw and edge dislocation densities have been calculated. The optical and electrical properties of the GaN films were characterized by Raman scattering spectra

low temperature photoluminescence spectra and Hall measurements

etc.

The position of the SiN

interlayer has no impact on the strain in GaN films

but the residual carrier concentration changes with the position of the interlayer.

关键词

Keywords

references

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