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1. 东华大学 理学院 上海,201620
2. 东华大学 材料学院 上海,201620
收稿日期:2009-10-25,
修回日期:2009-12-24,
网络出版日期:2010-11-22,
纸质出版日期:2010-11-22
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刘磊, 杨沁玉, 王德信, 杨平, 张菁. 介质阻挡放电等离子体沉积多孔硅纳米颗粒膜的光发射及红外光谱[J]. 发光学报, 2010,31(6): 904-907
LIU Lei, YANG Qin-yu, WANG De-xin, YANG Ping, ZHANG Jing. Dielectric Barrier Discharge Deposition of Porous Silicon-based Nanoparticle Films: The Optical Emission Spectrum and Fourier Transform Infrared Spectrum[J]. Chinese Journal of Luminescence, 2010,31(6): 904-907
刘磊, 杨沁玉, 王德信, 杨平, 张菁. 介质阻挡放电等离子体沉积多孔硅纳米颗粒膜的光发射及红外光谱[J]. 发光学报, 2010,31(6): 904-907 DOI:
LIU Lei, YANG Qin-yu, WANG De-xin, YANG Ping, ZHANG Jing. Dielectric Barrier Discharge Deposition of Porous Silicon-based Nanoparticle Films: The Optical Emission Spectrum and Fourier Transform Infrared Spectrum[J]. Chinese Journal of Luminescence, 2010,31(6): 904-907 DOI:
用介质阻挡放电(DBD)等离子体增强化学气相沉积(PECVD)的方法
以硅烷为源气体
在沉积区域加载脉冲负偏压进行调节
在玻璃基片上沉积得到具有荧光特征的多孔硅纳米颗粒膜。沉积过程的发射光谱结果表明
在412nm处出现SiH
*
(
A
2
X
2
0-0)特征峰
证明放电沉积过程中存在不同程度的硅烷裂解。将脉冲负偏压固定在-300V
当占空比从0.162增大到0.864时
薄膜的红外光谱显示SiOSi在1070cm
-1
伸缩振动吸收峰与800cm
-1
的弯曲振动峰都有所增强
而930cm
-1
的SiH弯曲振动减弱。说明随着占空比的增加
SiOSi键的结合越来越明显。
DBD(Dielectric-Barrier Discharges)-PECVD (Plasma Enhanced Chemical Vapor Deposition) was used to prepare porous nanoparticle silicon-based film from SiH
4
/Ar/H
2
at pressure of 0.5 MPa. Pulsed negative bias voltage was introduced to modulate the process and character of the films. The optical emission spectrum and Fourier transform infrared spectrum were used to study the deposition process. The dissociation of SiH
4
was indicated form specific spectrum of SiH
*
(
A
2
X
2
0-0) at 412 nm. When the pulsed duty cycle changed from 0.162 to 0.864
the stretch vibration band of SiOSi at 1 070 cm
-1
and the bending vibration band of SiOSi at 800 cm
-1
increased. At the same time
the bending vibration band of SiH at 930 cm
-1
decreased. More SiOSi structure was formed as the increase of the duty cycle.
Hrubesh L W, Poco J F. Thin aerogel film for optical, thermal, acoustic and electronic application [J]. J. Non-Crystalline Solids, 1995, 188 (1-2):46-53.[2] Marliers C, Despetis F, Etienne P, et al. Very large-scale structures in sintered silica aerogels as evidenced by atomic force microscopy and ultra-small angle X-ray scatting experiment [J]. J. Non-Crystalline Solids, 2001, 285 (1-3):175-180.[3] Watanabe K, Takeoka A, Fujiji M. Photoluminescence decay dynamics of SiO2 films containing Si nanocrystals and Er [J]. J. Lumin., 2000, 87-89 :426-428.[4] Yang Q Y, Liu Lei, Zhang J, et al. The effect of duty cycle on porous silica film deposited by PECVD // 2008 APCPST & SPSM, Hefei: Institute of Plasma Physics, Chinese Academy of Science, 2008, 266.[5] Xia Lei. Investigation of the process and properties of nano porous silicon-based thin film by plasma enhanced vapor deposition at atmospheric pressure . Shanghai: Donghua University, 2007 (in Chinese).[6] Yang Q Y, Liu Lei, Ding Ke. Effect of duty cycle on porous silica film Raman spectra [J]. J. Materials Engineering (材料工程), 2008, 10 :164-167 (in Chinese).[7] Luo J S, Rong Z L. Amorphous Semiconductor [M]. Xian: Xian Jiaotong University Publisher, 1986, 85-88 (in Chinese).[8] Kampas F J, Griffith R E. Origin of emitting species in the plasma deposition of a-Si ∶ H alloys [J]. J. Appl. Phys., 1981, 52 (3):1285-1288.[9] Schuppler S, Friedman S L, Marcus M N. Size, shape and composition of luminescent species in oxidized Si nanocrystals and H-passivated porous Si [J]. Phys. Rev. B, 1990, 52 (7):4910-4925.[10] Nesbit L A. Annealing characteristics of Si-rich SiO2 films [J]. Appl. Phys. Lett., 1985, 46 (1):38-40.
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