生长在p-GaAs衬底上的ZnO基异质结二极管电致发光

李炳辉; 姚斌; 李永峰; 邓蕊; 张振中; 刘卫卫; 单崇新; 张吉英; 申德振

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生长在p-GaAs衬底上的ZnO基异质结二极管电致发光

论文 | 更新时间：2020-08-12

- 生长在p-GaAs衬底上的ZnO基异质结二极管电致发光
- U ltraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate
- 发光学报 2010年31卷第6期页码：854-858
- 作者机构：
  
  1. 吉林大学物理学院,吉林长春,130021
  2. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室,吉林长春,130033
- 作者简介：
- 基金信息：
  
  Project supported by the Key Project of National Natural Science Foundation of China
- DOI：
  中图分类号： O482.31
- 收稿日期：2010-06-28，
  
  修回日期：2010-09-06，
  
  网络出版日期：2010-11-22，
  
  纸质出版日期：2010-11-22
- 稿件说明：
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李炳辉, 姚斌, 李永峰, 邓蕊, 张振中, 刘卫卫, 单崇新, 张吉英, 申德振. 生长在p-GaAs衬底上的ZnO基异质结二极管电致发光[J]. 发光学报, 2010,31(6): 854-858

LI Bing-hui, YAO Bin, LI Yong-feng, DENG Rui, LIU Wei-wei, SHAN Chong-xin, ZHANG Ji-ying, SHEN De-zhen. U ltraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate[J]. Chinese Journal of Luminescence, 2010,31(6): 854-858
李炳辉, 姚斌, 李永峰, 邓蕊, 张振中, 刘卫卫, 单崇新, 张吉英, 申德振. 生长在p-GaAs衬底上的ZnO基异质结二极管电致发光[J]. 发光学报, 2010,31(6): 854-858 DOI：

LI Bing-hui, YAO Bin, LI Yong-feng, DENG Rui, LIU Wei-wei, SHAN Chong-xin, ZHANG Ji-ying, SHEN De-zhen. U ltraviolet Electroluminescence from ZnO-based Heterojunction Light-emitting Diodes Fabricated on p-GaAs Substrate[J]. Chinese Journal of Luminescence, 2010,31(6): 854-858 DOI：

摘要

利用等离子体辅助分子束外延在p型砷化镓衬底上制备了ZnO异质结发光二极管。实验表明:GaAs与ZnO之间的氧化镁绝缘层能够有效改善器件光电性能

I-V

特性的研究表明该器件具有良好的整流特性

开启电压为3V

电致发光光谱由一个紫外发光峰和一个可见发光带构成

其来源分别为ZnO层中近带边缺陷以及深能级缺陷相关的辐射复合。

Abstract

ZnO-based heterojunction light-emitting diodes have been fabricated on p-type GaAs substrate by plasma-assisted molecular beam expitaxy. An electron-blocking MgO layer between thin ZnO film and p-GaAs substrate plays a key role in improving performance of the diodes. Comparing with the n-ZnO/p-GaAs heterojunction

the ZnO/MgO/p-GaAs heterojunction shows a typical diode characteristic with a forward threshold voltage of 3 V. Electroluminescence measurement indicates that the ZnO/MgO/p-GaAs heterojunction has a visible emission band attributed to the defect-related recombination in the ZnO layer and an ultraviolet emission peak.

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references

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