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1. 北京师范大学物理系
2. 北京师范大学 分析测试中心 北京,100875
3. 中国地质大学(北京) 材料科学与工程学院 北京,100083
收稿日期:2009-11-19,
修回日期:2010-02-25,
网络出版日期:2010-11-22,
纸质出版日期:2010-11-22
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吴正龙, 王金梅, 王亚芳, 陈鸾, 杨百瑞. 闪烁晶体碘化铯在紫外光和X射线激发下的发光特性[J]. 发光学报, 2010,31(6): 831-835
WU Zheng-long, WANG Jin-mei, WANG Ya-fang, CHEN Luan, YANG Bai-rui. Emission Properties of Scintillator Crystal CsI:Tl Excited by X-ray and UV Light[J]. Chinese Journal of Luminescence, 2010,31(6): 831-835
室温下掺铊碘化铯(CsI:Tl)晶体的吸收谱在230~320nm范围内有3个特征峰:310nm(4eV)、270nm(4.6eV)和245nm(5.1eV)。采用这3种不同激发能量(对应不同激发机制)的近紫外(UV)光激发得到的荧光(PL)光谱相同。这些PL谱与钨(W)靶X射线激发的辐照致荧光(RL)谱也类似。经分峰计算
PL和RL均含有4种熟知的3.1eV(400nm)、2.55eV(486nm)、2.25eV(550nm)和2.1eV(590nm)发光组分
但RL中2.1eV组分高于PL
同时2.55eV组分又低于PL。分析认为
这一差异来自于X射线对晶体的辐照损伤Tl
+
Va
+
、Tl
0
Va
+
相关的2.1eV吸收峰与2.55eV发光带重叠。结果表明:X射线比紫外光更易产生损伤从而影响晶体CsI:Tl的发光特性。
The absorption spectra of crystals CsI:Tl contain 310 nm (4.0 eV)
270 nm (4.6 eV) and 245 nm (5.1 eV) three characteristic features within the region 230~320 nm at the room temperature. The same PL spectra are observed under the excitations of the three UV lights 310
270
245 nm. These PL spectra are similar to the radioluminescence (RL) under the X-ray excitations from tungsten (W) target tube. Both PL and RL are composed of luminescence at 3.10
2.55
2.25
2.10 eV using Gauss deconvolution program. However
the 2.10 eV component in RL is stronger than that in PL while the 2.55 eV component is weaker. Such changes are caused from the radiation defects Tl
+
Va
+
and Tl
0
Va
+
created by X-ray irradiations
which lead to increasing Tl
2+
-STE and its emission (2.10 eV) accompanied by its self-absorption (2.55 eV) in CsI:Tl. The results show that X-ray induces the radiation defects more easily than UV light
which might affect luminescence features of the crystal.
Babin V, Fabeni P, Kalder K, et al. Photo- and thermally stimulated luminescence and defect in UV-irradiated CsI ∶ Tl and CsI ∶ Pb crystals [J]. Radiat. Meas., 1998, 29 (3-4):333-335.[2] Babin V, Kalder K, Krasnikov A, et al. Luminescence and defects creation under photoexcitation of CsI ∶ Tl crystal in Tl+-ralated absorption bands [J]. J. Lumin., 2002, 96 (1):75-85.[3] Trefilova L N, Charkina T, Kudin A, et al. Radiation defects creation in CsI(Tl)crystals and their luminescence properties [J]. J. Lumin., 2003, 102-103 :543-550.[4] Trefilova L, Grinynov B, Alekseev V, et al. The reasons the scintillation efficiency decrease of CsI(Tl) crystals exposed by the high-dosed radiation [J]. Radiat. Meas., 2007, 42 (4-5):839-842.[5] Wu Z, Yang B, Townsend P D. Low temperature radioluminescence spectra of CsI ∶ Tl [J]. Nucl. Instr. & Meth. in Phys. Res. B, 2008, 266 (21):4757-4761.[6] Wu Zhenglong, Yang Bairui. Radioluminescence of crystalline CsI and CsI(Tl)with various X-ray tube voltages [J]. J. Synthetic Crystals (人工晶体学报), 2009, 38 (3):666-671 (in Chinese).[7] Kawai T, Ichimura N, Hashimoto S, et al. Origin of the absorption bands of cesium halides doped with Tl+ ions [J]. Phys. Stat. Sol. (b), 2001, 227 (2):587-594.[8] Nagirnyi V, Stolovich A, Zazubovich S, et al. Peculiarities of the triplet relaxed excited-state structure and luminescence of a CsI ∶ Tl crystal [J]. J. Phys.: Condens. Matter., 1995, 7 (18):3637-3653.[9] Valais I, Nikolopoulos D, Kalivas N, et al. A systematic study of the performance of the CsI ∶ Tl single-crystal scintillator under X-ray excitation [J]. Nucl. Instr. & Meth. in Phys. Res. A, 2007, 571 (1-2):343-345.[10] Zang Jingcun, Liu Yanhang. Reearch development of scintillators and fluorescence [J]. J. Synthetic Crystals (人工晶体学报), 2004, 33 (2):266-271 (in Chinese).
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