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1. 中国科学院 研究生院 北京,100039
2. 中国科学院 激发态物理重点实验室 长春光学精密机械与物理研究所,吉林 长春,130033
收稿日期:2011-04-08,
修回日期:2011-05-26,
网络出版日期:2011-10-22,
纸质出版日期:2011-10-22
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彭航宇, 单肖楠, 马军龙, 付喜宏, 佟存柱, 王立军. 2 600 W偏振耦合高效率半导体激光光源[J]. 发光学报, 2011,32(10): 1036-1040
PENG Hang-yu, LIU Yun, SHAN Xiao-nan, ZHANG Jun-long, FU Xi-hong, TONG Cun-zhu, WANG Li-jun. 2 600 W High Efficiency Laser Diode Source with Polarization Coupling[J]. Chinese Journal of Luminescence, 2011,32(10): 1036-1040
彭航宇, 单肖楠, 马军龙, 付喜宏, 佟存柱, 王立军. 2 600 W偏振耦合高效率半导体激光光源[J]. 发光学报, 2011,32(10): 1036-1040 DOI:
PENG Hang-yu, LIU Yun, SHAN Xiao-nan, ZHANG Jun-long, FU Xi-hong, TONG Cun-zhu, WANG Li-jun. 2 600 W High Efficiency Laser Diode Source with Polarization Coupling[J]. Chinese Journal of Luminescence, 2011,32(10): 1036-1040 DOI:
将两个中心波长为808 nm
输出功率为1 500 W的半导体激光叠阵
经过快慢轴准直后
利用半波片将其中一个叠阵的偏振方向旋转90
使用偏振分光平板的耦合功能
将两个偏振方向相互垂直的激光耦合到一个光路。扩束后再通过焦距为100 mm的聚焦镜组聚焦
提高激光器的亮度。在工作电流为75 A时
输出功率达到了2 600 W
电光转换效率为48%
聚焦后的光斑尺寸为1 mm2 mm
功率密度为130 kWcm
-2
可直接应用于熔覆、表面硬化等加工领域。
As the increasing applications of laser diodes in laser cladding and laser hardening
the single laser diode optical power can not meet the actual requirements. An improvement of the power and power density is necesary and it can be achieved by beam shaping and beam combination such as polarization coupling. The polarization coupling technology is used to couple two laser beams with thin-film plate polarizer. In this paper
two 808 nm vertically stacked arrays with an output power of 1 500 W was achieved. After fast axis and slow axis collimated
the polarization direction of one stacked arrays is rotated 90 through a half wave plate
thus
the polarization directions of two laser stack are vertical. The beams of two lasers are incident on thin-film plate polarizer; one transmits through it
and the other is reflected on it. Finally
two beams combine to one. Polarization coupling of two bars increases the power by a factor of 1.6
and the output power is 2 600 W
electro-optical conversion efficiency is more than 48%. The spot size is about 1 mm 2 mm. This source reaches an intensity of 130 kWcm
-2
. This laser can be directly applied to cladding
surface hardening and other fields.
Ma Xiangzhu, Huo Jin, Qu Yi, et al. Thermal-resistor analysis of the laser chips with different size in C-mount package [J]. Chin. J. Lumin. (发光学报), 2011, 32 (2):184-187 (in Chinese).[2] Lin Zhiqi, Zhang Yang, Lang Yonghui, et al. Constant temperature control of semiconductor laser based on temperature characteristics of pn junction [J]. Chin. J. Lumin. (发光学报), 2009, 30 (2):223-227 (in Chinese).[3] Grenier P, Taillon Y, Labranche B, et al. Symmetrization device and laser diode system provided with the same:US,7260131 . 2007-08-01.[4] Spaeth W, Groetsch S, Moser R, et al. Microoptical device with mirrors: US,5808323 . 1998-09-15.[5] Gao Xin, Shinoda K, Saitoh M, et al. Laser light source and an optical system for shaping light from a laser-bar-stack:US,6943957 . 2005-09-13.[6] Feng Guangzhi, Gu Yuanyuan, Shan Xiaonan, et al. 808 nm high power diode laser stack with polarization coupling [J]. Chin. J. Lumin.(发光学报), 2008, 29 (4):695-720 (in Chinese).[7] Gu Yuanyuan, Feng Guangzhi, Shan Xiaonan, et al. 808 nm and 980 nm high power laser diode stack with wavelength coupling [J]. Opt. Precision Eng.(光学 精密工程), 2009, 17 (1):8-13 (in Chinese).[8] Ding Peng, Cao Yinhua, Su Guoqiang, et al. 1 kW high power diode laser with polarization coupling by Gran-Tylor prism [J]. Chinese Journal of Lasers (中国激光), 2009, 36 (2):290-293 (in Chinese).[9] Haake J M, Zediker M S. High power direct diode laser successes [J]. SPIE, 2004, 5336 :107-115.
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