利用MOCVD技术生长As掺杂的p-ZnMgO薄膜

赵龙; 殷伟; 夏晓川; 王辉; 史志锋; 赵旺; 王瑾; 董鑫; 张宝林; 杜国同

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利用MOCVD技术生长As掺杂的p-ZnMgO薄膜

材料合成及性能研究 | 更新时间：2020-08-12

- 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜
- As-doped p-type ZnMgO Films Grown by MOCVD
- 发光学报 2011年32卷第10期页码：1020-1023
- 作者机构：
  
  1. 集成光电子学国家重点联合实验室吉林大学电子科学与工程学院, 吉林长春 130012
  2. 大连理工大学物理与光电工程学院, 辽宁大连 116024
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60877020,61006006)资助项目()
- DOI：
  中图分类号： TN304.2
- 收稿日期：2011-05-12，
  
  修回日期：2011-06-30，
  
  网络出版日期：2011-10-22，
  
  纸质出版日期：2011-10-22
- 稿件说明：
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赵龙, 殷伟, 夏晓川, 王辉, 史志锋, 赵旺, 王瑾, 董鑫, 张宝林, 杜国同. 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜[J]. 发光学报, 2011,32(10): 1020-1023

ZHAO Long, YIN Wei, XIA Xiao-chuan, WANG Hui, SHI Zhi-feng, ZHAO Wang, WANG Jin, DONG Xin, ZHANG Bao-lin, DU Guo-tong. As-doped p-type ZnMgO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(10): 1020-1023
赵龙, 殷伟, 夏晓川, 王辉, 史志锋, 赵旺, 王瑾, 董鑫, 张宝林, 杜国同. 利用MOCVD技术生长As掺杂的p-ZnMgO薄膜[J]. 发光学报, 2011,32(10): 1020-1023 DOI：

ZHAO Long, YIN Wei, XIA Xiao-chuan, WANG Hui, SHI Zhi-feng, ZHAO Wang, WANG Jin, DONG Xin, ZHANG Bao-lin, DU Guo-tong. As-doped p-type ZnMgO Films Grown by MOCVD[J]. Chinese Journal of Luminescence, 2011,32(10): 1020-1023 DOI：

摘要

利用GaAs夹层掺杂的新方法

采用金属有机化学气相沉积(MOVCD)技术

通过控制生长温度

在蓝宝石衬底上成功制备出As掺杂的p型ZnMgO薄膜。利用X射线衍射分析(XRD)、霍尔效应测试和光致发光(PL)谱等表征方法对薄膜的晶体结构、电学性能和光学特性进行分析。结果表明:高温生长的ZnMgO薄膜具有良好的

轴取向性;480~520 ℃时所制备的ZnMgO薄膜为p型导电

500 ℃时所制备的样品电阻率最低

为26.33 cm

空穴浓度达1.63810

-3

迁移率为1.45 cm

/(Vs);室温PL谱显示

制得的p型ZnMgO薄膜具有较大的紫外与可见发光峰强度比

表明其具有良好的光学性能。

Abstract

By introducing the GaAs interlayer and controling growth temperature

the p-type ZnMgO films were grown on (0001) Al

substrates by metal organic chemical vapor deposition (MOCVD) method. The X-ray diffraction results indicated that the ZnMgO films showed

-axis preferential orientation at temperature of 440~520 ℃. A conversion of conduction type was confirmed by Hall effect measurement in a range of temperature from 480 to 520 ℃. The lowest resistivity was 26.33 cm

with a carrier concentration of 1.63810

-3

and a hall mobility of 1.45 cm

/(Vs). The room temperature photoluminescence (PL) spectrum displayed all the p-type ZnMgO films showed good optical qualities

with a big ratio of near band emission (NBE) to deep level emission (DLE).

关键词

Keywords

references

Kim H S, Pearton S J, Norton D P. Behavior of rapid thermal annealed ZnO∶P films grown by pulsed laser deposition [J]. J. Appl. Phys., 2007, 102 (10):104904-1-8.[2] Xia Xiaochuan, Zhao Wang, Jian Yuantao, et al. The structure and optical characters of the ZnO film grown on GaAs/Al2O3 substrate [J]. Appl. Surf. Sci., 2009, 255 (12):6313-6317.[3] Liu Binghui, Yao Bin, Li Yongfeng, et al. Ultraviolet electroluminescence from ZnO-based heterojunction light-emitting diodes fabricated on p-GaAs substrate [J]. Chin. J. Lumin. (发光学报), 2010, 31 (6):855-858 (in English).[4] Lin Lan, Ye Zhizhen, Gong Li, et al. Fabrication of Na-N codoped p-type ZnO films by RF re-active magnetron sputtering and post-annealing [J]. Chin. J. Lumin. (发光学报), 2010, 31 (2):200-203 (in Chinese).[5] Krtschil A, Dadgar A, Oleynik N, et al. Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic [J]. Appl. Phys. Lett., 2005, 87 (26):262105-1-3.[6] Minegishi K, Koiwai Y, Kikuchi Y, et al. Growth of p-type zinc oxide films by chemical vapor deposition [J]. Jpn. J. Appl. Phys., 1997, 36 (2):L1453-L1455.[7] Yuan G D, Ye Z Z, Zhu L P, et al. Control of conduction type in Al-and N-codoped ZnO thin film [J]. Appl. Phys. Lett., 2005, 86 (20):202106-1-3.[8] Ye Zhizhen, Xu Weizhong, Zeng Yujia, et al. Fabrication of ZnO light-emitting diode by using MOCVD method [J]. Chinese J. Semiconductors (半导体学报), 2005, 26 (11):2264-2268 (in Chinese).[9] Zhang X, Li X M, Chen T L, et al. p-type conduction in wide-gap Zn1-xMgxO films grown by ultrasonic spray pyrolysis [J]. Appl. Phys. Lett., 2005, 87 (9):092101-1-3.[10] Wei Z P, Yao B, Zhang Z Z, et al. Formation of p-type MgZnO by nitrogen doping [J]. Appl. Phys. Lett., 2006, 89(10):102104-1-3.[11] Dong Xin, Zhao Wang, Zhang Baolin, et al. Study on optical properties of p-type MgZnO fabricated by MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):130-132 (in Chinese).[12] Li Y J, Heo Y W, Kwon Y, et al. Transport properties of p-type phosphorus-doped (Zn,Mg)O grown by pulsed-laser deposition [J]. Appl. Phys. Lett., 2005, 87 (7):072101-1-3.[13] Pan X H, Ye Z Z, Zeng Y J, et al. Preparation of p-type ZnMgO thin films by Sb doping method [J]. J. Phys. D: Appl. Phys., 2007, 40 (14):4241-4244.[14] Qiu M X, Ye Z Z, He H P, et al. Effect of Mg content on structural, electrical, and optical properties of Li-doped Zn1-xMgxO thin films [J]. Appl. Phys. Lett., 2007, 90 (18):182116-1-3.[15] Bian J M, Liu W F, Liang H W, et al. Room temperature electroluminescence from the n-ZnMgO/ZnO/p-ZnMgO heterojunction device grown by ultrasonic spray pyrolysis [J]. Chem. Phys. Lett., 2006, 430 (1-3):183-187.[16] Limpijumnong S, Zhang S B, Wei S H, et al. Doping by large-size-mismatched impurities: The microscopic origin of arsenicor antimony-doped p-type zinc oxide [J]. Phys. Rev. Lett., 2004, 92 (15):155504-1-3.[17] Sun J C, Yang T P, Du G T, et al. Anneal effects on electrical and optical properties of ZnO films deposited on GaAs by metal organic chemical vapor deposition [J]. Appl. Surf. Sci., 2006, 254 (22):7482-7485.[18] Bayliss C R, Kirk D L. The compositional and structural changes that accompany the thermal annealing of (100) surfaces of GaAs, InP and GaP in vacuum [J]. J. Phys. D: Appl. Phys., 1976, 9 (2):233-237.

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