硅纳米线阵列的光学特性

周建伟; 梁静秋; 梁中翥; 王维彪

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硅纳米线阵列的光学特性

论文 | 更新时间：2020-08-12

- 硅纳米线阵列的光学特性
- Research on Optical Properties of Silicon Nanowire Arrays
- 发光学报 2010年31卷第6期页码：894-898
- 作者机构：
  
  1. 中国科学院研究生院北京,100049
  2. 中国科学院长春光学精密机械与物理研究所应用光学国家重点实验室,吉林长春,130022
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60877031,61007023)资助项目()
- DOI：
  中图分类号： TM615
- 收稿日期：2010-01-03，
  
  修回日期：2010-04-12，
  
  网络出版日期：2010-11-22，
  
  纸质出版日期：2010-11-22
- 稿件说明：
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周建伟, 梁静秋, 梁中翥, 王维彪. 硅纳米线阵列的光学特性[J]. 发光学报, 2010,31(6): 894-898

ZHOU Jian-wei, LIANG Jing-qiu, LIANG Zhong-zhu, WANG Wei-biao. Research on Optical Properties of Silicon Nanowire Arrays[J]. Chinese Journal of Luminescence, 2010,31(6): 894-898
周建伟, 梁静秋, 梁中翥, 王维彪. 硅纳米线阵列的光学特性[J]. 发光学报, 2010,31(6): 894-898 DOI：

ZHOU Jian-wei, LIANG Jing-qiu, LIANG Zhong-zhu, WANG Wei-biao. Research on Optical Properties of Silicon Nanowire Arrays[J]. Chinese Journal of Luminescence, 2010,31(6): 894-898 DOI：

摘要

在常温常压条件下

采用改进的金属催化化学腐蚀方法在n型单晶硅片(100)上制备了大面积垂直于硅衬底、直径均匀、排列整齐的硅纳米线阵列。分析了样品的表面形貌和反射谱

纳米线直径为10~50nm。在腐蚀时间分别为15

60min时

纳米线长度分别为9

34m。样品的减反射性能优异

在300~1000nm波段

得到了2.4%的反射率。初步分析了纳米线阵列的减反射机制和不同腐蚀时间样品的反射率差异。

Abstract

Large area aligned identical silicon nanowires array were prepared on mono-crystalline n-Si(100) wafers by the metal catalyzed chemical etching method under normal conditions(room temperature

1.0110

Pa). The morphologies of prepared samples and reflection spectrum are analyzed

the diameter of SiNWs is 10~50 nm

after etching time of 15

30 and 60 min the length of SiNWs is 9

34 m

respectively. The reflection spectrua show that the obtained SiNW arrays could drastically suppress the optical reflection over a wide spectral bandwidth ranging of 300~1 000 nm

the reflectance is about 2.4%.The mechanism of antireflectivity and difference among the samples are analyzed.

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references

Burgers A R, Bultman J H, Beneking C, et al. Silicon solar cells textured by reactive ion etching with natural lithography //16th European Photovoltaic Solar Energy Conference, Galasgow.UK Earthscan/James & James, 2000, 1427-1430.[2] Vazsonyi E, Clercq K D, Einhaus R, et al. Improved anisotropic etching process for industrial texturing of silicon solar cells [J]. Sol. Energy Mater. Sol. Cells, 1999, 57 (2):l79-188.[3] King D L, Buck M E. Experimental optimization of an anisotropic etching process for random texturization of silicon solar cells . New York: IEEE, 1991, 303-308.[4] You J S, Kim D, Huh J Y. Experiments on anisotropic etching of Si in TMAH [J]. Sol. Energy Mater. Sol. Cells, 2001, 66 (1-4):37-44.[5] Xi Z Q, Yang D R, Que D L. Texturization of monocrystal line silicon with tribasic sodium phosphate [J]. Sol. Energy Mater. Sol. Cells, 2003, 77 (3):255-263.[6] Yang Zhiping, Yang yong, Li Xudong, et al. Effect of sodium silicate on texture of single crystalline silicon wafer for solar cell [J]. J. Chin. Ceramic Soci.(硅酸盐学报), 2005, 33 (12):472-476 (in Chinese).[7] Nishimoto Y, Namba K. Investigation of texturization for crystalline silicon solar cells with sodium carbonate solutions [J]. Sol. Energy Mater. Sol. Cells, 2000, 61 (4):393-402.[8] Wan L J, Gong W L, Jiang K W, et al. Preparation and surface modification of silicon nanowires under normal conditions [J]. Applied Surface Science, 2008, 254 (15):4899-4907.[9] Gong Wenli, Wan Lijuan, Zhang Jian. Preparation of the patterning silicon nanowires [J]. J. Functional Materials and Devices (功能材料与器件学报), 2009, 15 (6):587-590 (in Chinese).[10] Peng Kuiqing, Hu Juejun, Yan Yunjie, et al. Fabrication of single-crystalline silicon nanowires by scratching a silicon surface with catalytic metal particles [J]. Adv. Funct. Mater., 2006, 16 (3):387-394.[11] Peng Kuiqing, Fang Hui, Hu Juejun, et al. Metal-particle-induced, highly localized site-specific etching of Si and formation of single-crystalline Si nanowires in aqueous fluoride solution [J]. Chem. Eur. J., 2006, 12 (30):7942-7947.[12] Yu Daoyin, Tan Hengying. Engineering Optics [M]. Beijing: China Machine Press, 2006, 289-290.[13] Qiu Mingbo, Huang Yinhui, Liu Zhidong, et al. Numerical study on effect of silicon texture structure on reflectance of light [J]. Acta Optica Sinica (光学学报), 2008, 28 (12):2394-2399 (in Chinese).[14] Fang Hui, Peng Kuiqing, Wu Yin, et al. Analysis of the performance of silicon nanowire array solar cells [J]. Acta Energiae Solaris Sinica (太阳能学报), 2010, 31 (1):27-32 (in Chinese).

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