表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

王书方; 李喜峰; 张建华

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表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响

论文 | 更新时间：2020-08-12

- 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响
- Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO:Ga Contact
- 发光学报 2010年31卷第6期页码：848-853
- 作者机构：
  
  1. 上海大学新型显示及应用集成教育部重点实验室上海,200072
  2. 上海大学机电工程与自动化学院上海,200072
- 作者简介：
- 基金信息：
  
  国家自然科学基金(51072111)();上海市科委发展基金(08DZ1140603,08QH14007)();教育部新世纪优秀人才支持计划(NCET-07-0535)
- DOI：
  中图分类号： O484;TN301
- 收稿日期：2009-12-21，
  
  修回日期：2010-06-07，
  
  网络出版日期：2010-11-22，
  
  纸质出版日期：2010-11-22
- 稿件说明：
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王书方, 李喜峰, 张建华. 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响[J]. 发光学报, 2010,31(6): 848-853

WANG Shu-fang, LI Xi-feng, ZHANG Jian-hua. Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO:Ga Contact[J]. Chinese Journal of Luminescence, 2010,31(6): 848-853
王书方, 李喜峰, 张建华. 表面化学处理和退火对p-GaN/ZnO:Ga接触特性的影响[J]. 发光学报, 2010,31(6): 848-853 DOI：

WANG Shu-fang, LI Xi-feng, ZHANG Jian-hua. Effects of Surface Chemical Treatment and Annealing on p-GaN/ZnO:Ga Contact[J]. Chinese Journal of Luminescence, 2010,31(6): 848-853 DOI：

摘要

ZnO:Ga(GZO)透明电极沉积在p-GaN表面

用作透明电流扩展层。直接沉积在p-GaN上的p-GaN/GZO存在较大的势垒

容易形成肖特基接触

而良好的欧姆接触对功率LED器件至关重要。为了降低接触势垒

采用盐酸和氢氧化钠溶液对GaN表面进行去氧化层处理

并对p-GaN/GZO进行退火处理

研究表面处理和退火对p-GaN/GZO接触特性的影响。研究表明:碱性溶液处理有利于降低接触势垒;退火处理后

接触势垒略有增加。

Abstract

ZnO:Ga (GZO) transparent conductive thin film was deposited on p-GaN acting as the current spreading layer

but it leads to a large contact barrier because of the formation of Schottky contact. However

ohmic contact is of great importance to powered LED. In order to decrease the contact barrier

HCl and NaOH treatment of the p-GaN surface and annealing were employed in this work. The effects of different chemical treatment and annealing on p-GaN/GZO contact property were studied. It is obvious that solutions of alkaline treatment of p-GaN surface can decrease the interfacial barrier

which led to ohmic contact

and the barrier can be lightly increased by annealing.

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references

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