Si基CeO2薄膜的发光特性

王申伟; 衣立新; 丁甲成; 高靖欣; 王永生

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Si基CeO₂薄膜的发光特性

论文 | 更新时间：2020-08-12

- Si基CeO₂薄膜的发光特性
- Photoluminescence Properties of Si-based CeO₂ Films
- 发光学报 2010年31卷第5期页码：762-766
- 作者机构：
  
  北京交通大学光电子技术研究所发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
  
  国家自然科学基金(60977017)资助项目()
- DOI：
  中图分类号： O472.3
- 收稿日期：2010-01-25，
  
  修回日期：2010-03-15，
  
  网络出版日期：2010-09-21，
  
  纸质出版日期：2010-09-21
- 稿件说明：
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王申伟, 衣立新, 丁甲成, 高靖欣, 王永生. Si基CeO2薄膜的发光特性[J]. 发光学报, 2010,31(5): 762-766

WANG Shen-wei, YI Li-xin, DING Jia-cheng, GAO Jing-xin, WANG Yong-sheng. Photoluminescence Properties of Si-based CeO2 Films[J]. 发光学报, 2010,31(5): 762-766
王申伟, 衣立新, 丁甲成, 高靖欣, 王永生. Si基CeO2薄膜的发光特性[J]. 发光学报, 2010,31(5): 762-766 DOI：

WANG Shen-wei, YI Li-xin, DING Jia-cheng, GAO Jing-xin, WANG Yong-sheng. Photoluminescence Properties of Si-based CeO2 Films[J]. 发光学报, 2010,31(5): 762-766 DOI：

摘要

利用电子束蒸发技术在p型硅衬底上沉积了200 nm厚的CeO

薄膜样品

将样品置于弱还原气氛中高温退火后

观察到薄膜在385

418 nm以及445 nm左右出现三个明显的发光峰。结合激发光谱、吸收光谱以及XRD分析表明:CeO

薄膜在高温下容易发生失氧反应

出现Ce

离子转变

离子在紫外光的激发下

电子由O2p跃迁到5d能级

再由5d能级向4f能级跃迁

从而产生强烈的蓝紫外发射

而445 nm左右的发光峰则来自于SiO

薄膜的缺陷发光。样品选择900~1 200 ℃不同温度退火

并且在1 200 ℃下进行了不同时间的退火。研究结果显示:在1 200 ℃下进行2 h的退火

薄膜发光强度达到最大。

Abstract

CeO

films were deposited on p type Si wafers by e-beam evaporation technology. Three photoluminescence peaks which located around 385

418 nm and 445 nm were obtained after annealing in weak redu-cing atmosphere at high temperature. It was indicated that CeO

films transferred to amorphous state as the valence conversion of Ce

which was induced by reducing atmosphere annealing. The PL spectrum of 385 nm and 418 nm was assigned to the transition from 5d energy level of Ce

ions to

7/2

and

5/2

manifolds of 4f energy level

respectively

while the peak around 445 nm was assigned to the O vacancies of SiO

. Furthermore

the changes of PL intensity in CeO

films annealed with different temperature and time were also investigated. The maximum PL intensity was obtained after the films annealing at 1 200 ℃ for 2 h compared with other temperature and time. It was indicated that valence conversion of Ce

was enhanced by increasing annealing temperature and time

that is

the PL intensity of the films was also enhanced because of the increasing of Ce

ions

however

the energy transfer between Ce

and Ce

ions

occurred as excessive Ce

ions were formed in the films

resulting in concentration quenching.

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