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1. 徐州工程学院 数学与物理科学学院,江苏 徐州,221008
2. 吉林大学 原子与分子物理研究所,吉林 长春,130023
收稿日期:2010-05-25,
修回日期:2010-07-20,
网络出版日期:2010-09-21,
纸质出版日期:2010-09-21
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潘跃武, 胡 湛. 一维纳米SiC-CNTs复合结构的生长机制和阴极射线发光[J]. 发光学报, 2010,31(5): 743-747
PAN Yue-wu, HU Zhan. Growth Mechanism and Cathodoluminescence of One-dimensional Composite Nanostructure[J]. 发光学报, 2010,31(5): 743-747
采用直接固相反应法制备了一维SiC-CNTs纳米复合结构。初始反应原料为纯的硅粉和碳纳米管混合物
没有使用任何触媒
在1 400 ℃温度下获得了一维纳米产物。采用X射线衍射、扫描电子显微镜、拉曼光谱、阴极射线发光光谱研究了产物的结构和光学性质。获得的一维SiC-CNTs纳米复合结构外径约为60 nm
长度超过几个微米。CL谱中存在三个发射带
中心位置分别为2.89
2.39
2.22 eV。
One-dimensional silicon carbide-carbon nanotube composite nanostructure was fabricated using a direct solid reaction process between pure silicon powders and carbon nanotubes at 1 400 ℃ in this paper. A structural and optical analysis
by mean of X-ray diffraction
scanning electron microscopy
Raman scattering and cathodoluminescence spectroscopy were performed. The outer diameter of the as-prepared one-dimensional composite nanostructure was approximately 60 nm. The composite products showed pronounced luminescent properties with three emission bands centered at 2.89
2.39 and 2.22 eV by room temperature cathodoluminescence.
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