Transparent conducting thin indium bismuth oxide (IBO) film was prepared by using a modification-specific reactive thermal co-evaporation method. The room temperature carrier concentrations

resistivities and Hall carrier mobilities of the IBO coating were estimated from Hall effect measurement system. Transmittance spectra were measured with a Shimadzu UV-3101PC spectrophotometer. A field emission scanning electron microscopy (SEM) Hitachi S-4800 and GENE SIS2000 XMS 60S (EDAX Inc.) were used to investigate the morphology and ingredient of the IBO film

respectively. The thin IBO film shows a good optical transmittance in the visible spectra range and a electrical resistivity of 3.14310

-3

cm corresponding to a carrier density of 3.95510

19

cm

-3

and a Hall mobility of 50.21 cm

2

V

-1

s

-1

respectively. Using IBO film as the anode

organic light-emitting diode (OLED) with the structure of Glass/IBO/MoO

3

/NPB/Alq

3

/LiF/Al exhibits a high luminance of 30 230 cd/m

2

and an EL efficiency of 5.1 cd/A. Our results indicated that IBO is a promising transparent conducting oxide material

and a suitable electrical contact for optoelectronic devices.