溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

祐卫国; 张 勇; 李 璟; 杨 峰; CHENG C H; 赵 勇

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溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响

论文 | 更新时间：2020-08-12

- 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响
- Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering
- 发光学报 2010年31卷第4期页码：503-508
- 作者机构：
  
  1. 西南交通大学超导研究开发中心材料先进技术教育部重点实验室,四川成都,610031
  2. School of Materials Science and Engineering, University of New South Wales,NSW Sydney,Australia,2052
- 作者简介：
- 基金信息：
  
  国家自然科学基金(50588201,50872116)();国家重大基础研究项目"();973"();(2007CB616906)();国家高科技项目&
- DOI：
  中图分类号： O482.31
- 收稿：2009-09-07，
  
  修回：2009-12-24，
  
  网络出版：2010-08-27，
  
  纸质出版：2010-08-27
- 稿件说明：
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祐卫国, 张勇, 李璟, 杨峰, CHENG C H, 赵勇. 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J]. 发光学报, 2010,31(4): 503-508

YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. 发光学报, 2010,31(4): 503-508
祐卫国, 张勇, 李璟, 杨峰, CHENG C H, 赵勇. 溅射气氛对RF反应磁控溅射制备ZnO薄膜微结构及光致发光特性的影响[J]. 发光学报, 2010,31(4): 503-508 DOI：

YOU Wei-guo, ZHANG Yong, LI Jing, YANG Feng, CHENG C H, ZHAO Yong. Effect of Sputtering Atmosphere on the Structure and Optical Properties of ZnO Thin Films by RF Reactive Magnetron Sputtering[J]. 发光学报, 2010,31(4): 503-508 DOI：

摘要

用射频反应磁控溅射法在不同溅射压强和氩氧比下制备了ZnO薄膜

通过X射线衍射(XRD)、扫描电镜(SEM)和光致发光(PL)谱等研究了溅射压强和氩氧比对ZnO薄膜结构和光学性质的影响。测量结果显示

所制备的ZnO薄膜为六角纤锌矿结构

具有沿

轴的择优取向;溅射压强

=0.6 Pa

氩氧比Ar/O

=20/5.5 sccm时

(002)晶面衍射峰强度和平均晶粒尺寸较大

(O02)XRD峰半峰全宽(FWHM)最小

光致发光紫外峰强度最强。

Abstract

Thin ZnO films were prepared by RF reactive magnetron sputtering with different sputtering pressure and argon-oxygen ratio.The effect of the sputtering pressure and argon-oxygen ratio on the structure and optical properties of the ZnO films were studied using the X-ray diffraction (XRD)

scanning electron microscopy (SEM) and F-7100 photoluminescence (PL) spectroscopy. The results indicated that the thin ZnO films have hexagonal wurtzite single phase structure and a preferred orientation with the c axis perpendicular to the substrates.When the sputtering pressure is 0.6 Pa and the argon-oxygen ratio is Ar/O

=20/5.5 sccm

the (002) plane diffraction peak intensity and the grain size are larger

the FWHM of (002) peak is the smallest

UV photoluminescence peak intensity is the strongest.

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