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1. 华南师范大学 光电子材料与技术研究所, 广东 广州 510631
2. 佛山科技学院 物理系,广东 佛山,528000
收稿日期:2009-11-19,
修回日期:2009-12-12,
网络出版日期:2010-08-27,
纸质出版日期:2010-08-27
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郑同场, 李炳乾, 夏正浩. 蒙特卡罗模拟LED并联电路电流降额特性[J]. 发光学报, 2010,31(4): 590-594
ZHENG Tong-chang, LI Bing-qian, XIA Zheng-hao. Monte-Carlo Simulation of Current Derating Characteristics of LED Parallel Circuit[J]. 发光学报, 2010,31(4): 590-594
利用蒙特卡罗方法对LED并联电路的电流降额特性进行了模拟
假设分档后的大功率白光LED的正向电压(
V
F
)分布符合正态分布
研究了1
n(2n
15)系列LED并联电路电流降额量(
I
P
)的概率
(P)
分布。模拟结果表明
I
P
的概率分布函数偏离了正态分布
密度函数曲线最高值点的两侧不对称
左侧较右侧陡峭;随着LED并联数(
n
)的增加
概率密度函数沿
I
P
增大的方向移动
并且越来越趋近于正态分布。当
n
一定时
I
P
随电路中出现LED承载电流超过其额定电流的概率增大而降低
降低的速度由快转慢;当
P
为0.01%~1%时
I
P
大约为20%~30%。当
P
一定时
I
P
随
n
的增加而增大;当
n>6
时
I
P
的增大速度变缓。模拟结果可以推广到
mn
阵列化互连大功率LED模组。
Based on Monte-Carlo simulation
the current derating characteristics with LED parallel circuit is studied
especially the probability distribution of current derating of a series (2
n
15) of LED parallel circuit
given the forward voltage drop values of LED after bin agree with Gaussian distribution. The simulation shows that the probability distribution of current derating deviates Gaussian distribution
namely the left and right of the peak point of probability density function is asymmetric
Of which the left side is more sharp than the right side. The probability distribution of current derating is more and more tend to be Gaussian distribution as the quantity of parallel LED increasing. As the probability of occurrence that the current bearing by LED exceeds its rated current increasing
the current derating needed by the parallel circuit increases gradua-lly but the increase rate tends to be reduced. The current derating is about between 20% and 30% when the probability is between 0.01% and 1%. The current derating needed by the parallel circuit increases gradually but the increase rate tends to be reduced as the quantity of LED increasing (
n
>
6). The simulation results can be applied to the LED interconnection array.
Li Bingqian, Liu Yuhua, Feng Yuchun, et al. The power dissipation of equivalent series resistance and its influence on lumen efficiency of GaN based high power light-emitting diodes
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Wang Jian, Huang Xian, Liu Li, et al. Effect of temperature and current on LED luminous efficiency
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Xu Guofang, Rao Haibo, Yu Xinmei, et al. Improvement of optical uniformity of white LEDs
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Park Ji Hyun, Lee Sung Jun, Chio S M. Wafer level bonding for LED packaging using six sigma methodology
. Diffusion and Defect Data Part B, Solid State Phenomena, 2007, 124/126 (Part 1):519-522.
Oliver Kckmann. High-power LED arrays special requirements on packaging technology
. SPIE, 2006, 6134 :613404-1-8.
Huo Yanming, Chen Fushen. The research and simulation of LED array in lighting
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Tian Dalei, Guan Rongfeng. Studies on the optical properties of LED based on microlens array
. Chin. J. Lumin. (发光学报), 2009, 30 (1):69-72 (in Chinese).
Chen C H, Tsai W L, Tsai M Y. Thermal resistance and reliability of low-cost high-power LED packages under WHTOL test . 10th International Conference on Electronic Materials and Packaging, 2008, Taibei: IEEE, 271-276.
Dieker Henning, Miesner Christian, Pttjer Dirk, et al. Comparison of different LED Packages
. SPIE, 2007, 6797 :679701-1-12。
Lan Kim, Moo Whan Shin. Thermal resistance measurement of LED package with multi-chips
. IEEE Transactions on Components and Packaging Technologies, 2007, 30 (4):632-636.
Chien Weiting, Lee Tsungxian, Ma Shinxingk, et al. A precise optical model of phosphor-based multi-chip white LEDs
. SPIE, 2007, 6669 :666901-1-24.
Miyachi Tsutomu, Sakuta Hiroaki, Kamoh K, et al. Development of light sources by large-scale integrated light-emitting diodes
. J. Light & Visual Environment, 2008, 32 (2):238-240.
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