In气氛下晶体生长对Mg掺杂p-Al<SUB>x</SUB>Ga<SUB>1-x</SUB>N激活能的影响

张延召; 秦志新; 桑立雯; 许正昱; 于 涛; 杨子文; 沈 波; 张国义; 赵 岚; 张向锋; 成彩晶; 孙维国

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In气氛下晶体生长对Mg掺杂p-Al_xGa_1-xN激活能的影响

论文 | 更新时间：2020-08-12

- In气氛下晶体生长对Mg掺杂p-Al_xGa_1-xN激活能的影响
- Influence of Indium Doping on Acceptor Activation Energy in p-type Al_xGa_1-xN
- 发光学报 2010年31卷第1期页码：91-95
- 作者机构：
  
  1. 北京大学物理学院
  2. 洛阳光电研究所,河南洛阳,471009
  3. 人工微结构和介观物理国家重点实验室北京,100871
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.4
- 收稿：2009-04-01，
  
  修回：1900-1-2，
  
  网络出版：2010-02-20，
  
  纸质出版：2010-02-20
- 稿件说明：
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张延召, 秦志新, 桑立雯, 等. In气氛下晶体生长对Mg掺杂p-Al_xGa_1-xN激活能的影响[J]. 发光学报, 2010,31(1):91-95.

ZHANG Yan-zhao, QIN Zhi-xin, SANG Li-wen, et al. Influence of Indium Doping on Acceptor Activation Energy in p-type Al_xGa_1-xN[J]. Chinese Journal of Luminescence, 2010, 31(1): 91-95.
张延召, 秦志新, 桑立雯, 等. In气氛下晶体生长对Mg掺杂p-Al_xGa_1-xN激活能的影响[J]. 发光学报, 2010,31(1):91-95. DOI：

ZHANG Yan-zhao, QIN Zhi-xin, SANG Li-wen, et al. Influence of Indium Doping on Acceptor Activation Energy in p-type Al_xGa_1-xN[J]. Chinese Journal of Luminescence, 2010, 31(1): 91-95. DOI：

摘要

Ⅲ-Ⅴ族氮化物宽禁带半导体材料体系中

普通方法生长的p型外延层电导率一般都很低

成为了制约器件性能提高的瓶颈。在p-Al

1-x

N材料中

Mg受主的激活能较大

并且随Al组份增加而增大。通过在p-Al

1-x

N材料生长过程中引入三甲基铟(TMIn)

发现能有效地降低Al

1-x

N材料中受主态的激活能。为研究不同In气氛下生长的p-Al

1-x

N材料的性质

在使用相同二茂基镁(CP2Mg)的情况下

改变TMIn流量

生长了A

C和D四块样品。X射线衍射(XRD)组份分析表明:在1 100 ℃下生长Al

1-x

N外延层时

In的引入不会影响晶体组份。利用变温霍尔(Hall)测试研究了p-Al

1-x

N材料中受主的激活能

结果表明:In气氛下生长的外延层相比无In气氛下生长的外延层

受主激活能明显降低

电导率显著提高。采用这种方法改进深紫外发光二极管(LED)的p-Al

1-x

N层后

LED器件性能明显提高。

Abstract

Influence of Indium doping on acceptor activation energy in p-type Al

1-x

N was presented. The p-type Al

1-x

N epilayers were grown on AlN/sapphire templates by metal organic chemical vapor deposition (MOCVD). TMIn flow rate is varied as 0

80 and 120 sccm while keeping other growth conditions changeless. X-ray diffraction (XRD) was used to determine the crystalline quality and Al composition in Al

1-x

N epilayers. At room temperature

the resistivity of p-type Al

0.43

0.57

N epilayer grown In doping is in order of 10

Ω·cm

but that grown without In is above 1×10

Ω·cm. Variable temperature Hall-effect measurements were employed to determine the acceptor activation energy in p-type Al

0.43

0.57

N epilayers. It was seen that the acceptor activation energy decreases significantly with the introduction of In. The minimum of 259 meV is obtained at TMIn flow rate of 80 sccm. It was suggested that acceptor-donor-acceptor (A-D-A) complexes could be formed in p-type Al

0.43

0.57

N epilayers. The formation of A-D-A complexes would decrease the acceptor activation energy in p-type Al

0.43

0.57

N epilayers due to lower activation energy for A-D-A complexes. In order to verify the influence of the In-ambient on acceptor activation energy

the ultraviolet light-emitting diodes (UV-LEDs) were fabricated. It was seen that there are a lower turn-on voltage and a lower diode series resistance for the UV-LEDs fabricated with p-type Al

0.43

0.57

N grown under In-doping

compared with that without In-ambient.

关键词

Keywords

references

. Nishida Toshio, Saito Hisao, Kobayashi Naoki. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN [J]. Appl. Phys. Lett., 2001, 79 (6):711-713.

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In气氛下晶体生长对Mg掺杂p-AlxGa1-xN激活能的影响

Influence of Indium Doping on Acceptor Activation Energy in p-type AlxGa1-xN

DOI：

摘要

Abstract

关键词

Keywords

references

In气氛下晶体生长对Mg掺杂p-Al_xGa_1-xN激活能的影响

Influence of Indium Doping on Acceptor Activation Energy in p-type Al_xGa_1-xN