One-dimensional (1D) semiconducting nanomaterials have attracted considerable interest for their potential applications in optoelectronic and microelectronic devices. Among thoses 1D semiconducting nanomaterials

ZnO is a wide band gap semiconductor and one of the most functional materials. On account of its many interesting properties

such as superior emission

chemical and thermal stability

transparency

biocompatibility

and wide electrical conductivity range

ZnO has a variety of applications in an emerging area of nanotechnology. Moreover

as a very important one of ZnO nanostructure groups

ZnO nanorods(NRs) have wide applications in nanoelectronics including nanobased light-emitting diodes (LEDs)

field effect transistors (FETs)

ultraviolet (UV) lasers

and nanogenerators. Until now

there are numerous experimental methods to prepare ZnO NRs involving molecular beam epitaxy (MBE)

sputtering

electrochemical deposition

vapor phase transport (VPT)

chemical vapor deposition (CVD)

and thermal evaporation. However

most of these attempts need some kind of metals to act as a catalyzer. Aurum

zinc

argentine

and aluminium are often used in these methods

which make the prepared ZnO NRs impure. In the cases the metallic impurities have awful influence on the electrical and optical properties of ZnO NRs

an advanced and catalyst-free ZnO growth method needs to be exploited.In this paper

ZnO NRs were successfully synthesized on indium phosphide (InP) (100) substrates by using pulsed laser deposition (PLD) method with catalyst-free. The morphology

crystal structural and optical properties were characterized with scanning electron microscopy (SEM)

X-ray diffraction (XRD) and photoluminescence (PL) analytic approaches

respectively. SEM pattern showed the ZnO nanorods were well-oriented. From the XRD scan results

a strong peak was observed at 34.10° attributed to the ZnO (002) face

indicating that the growth direction is well-oriented along c axis. A typical PL spectrum was measured at room temperature

showing a strong free-excition emission at about 379 nm

with full width at half maximum (FWHM) value of 19 nm

no deep level emission was detected

indicating that the ZnO nanorods produced in this experiment are of high optical quality.