SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善

康朝阳; 赵朝阳; 刘峥嵘; 孙 柏; 唐 军; 徐彭寿; 谢家纯

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SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善

论文 | 更新时间：2020-08-12

- SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善
- Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)
- 发光学报 2009年30卷第6期页码：807-811
- 作者机构：
  
  1. 中国科学技术大学物理系
  2. 中国科学技术大学国家同步辐射实验室合肥,230029
  3. 中国科学院合肥智能机械研究所, 安徽合肥 230031
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472;O482.31
- 收稿日期：2009-03-31，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-12-30，
  
  纸质出版日期：2009-12-30
- 稿件说明：
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康朝阳, 赵朝阳, 刘峥嵘, 等. SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善[J]. 发光学报, 2009,30(6):807-811.

KANG Chao-yang, ZHAO Chao-yang, LIU Zheng-rong, et al. Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)[J]. Chinese journal of luminescence, 2009, 30(6): 807-811.
康朝阳, 赵朝阳, 刘峥嵘, 等. SiC缓冲层对Si表面生长的 ZnO薄膜结构和光电性能的改善[J]. 发光学报, 2009,30(6):807-811. DOI：

KANG Chao-yang, ZHAO Chao-yang, LIU Zheng-rong, et al. Improvement of the Structure and Photoelectrical Properties of ZnO Films Based on SiC Buffer Layer Grown on Si(111)[J]. Chinese journal of luminescence, 2009, 30(6): 807-811. DOI：

摘要

用脉冲激光沉积(PLD)技术制备了ZnO/SiC/Si和 ZnO/Si薄膜并制成了紫外探测器。利用X射线衍射(XRD)

光致发光(PL)谱

I-V

曲线和光电响应谱对薄膜的结构和光电性能进行了研究。实验结果表明:SiC缓冲层改善了ZnO薄膜的结晶质量和光电性能

其原因可能是SiC作为柔性衬底能够减少ZnO与Si 之间大的晶格失配和热失配导致的界面缺陷和界面态。

Abstract

The films of ZnO/SiC/Si and ZnO/Si were grown by pulsed-laser-deposition (PLD) technique and were processed to fabricate ultraviolet (UV) detectors. The effects of SiC buffer layer on the structure and photoelectrical properties of ZnO films grown on Si (111) substrates were investigated by the X-ray diffraction (XRD)

photoluminescence (PL)

current-voltage (

I-V

) and photoelectrical response measurements. The results showed that the SiC buffer layer can effectively improve the crystalline qualities

optical and photoelectrical properties of the ZnO thin film grown on Si substrate. It is obvious that

as a compliant substrate

SiC buffer layer makes the interface defects and interface state density reduce because the partial stress induced by large crystal lattice mismatch and thermal mismatch between ZnO and SiC can be relaxed.

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Keywords

references

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