InxGa1-xN/InyGa1-yN多量子阱结构 发光特性的测量与分析

郭洪英; 潘定珍; 范俊卿; 马 旭; 戴振宏; 孙元平

doi:null

您当前的位置：

首页 >

文章列表页 >

In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析

论文 | 更新时间：2020-08-12

- In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析
- Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures
- 发光学报 2009年30卷第6期页码：797-801
- 作者机构：
  
  烟台大学光电信息科学技术学院,山东烟台,264005
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 收稿：2009-01-22，
  
  修回：1900-1-2，
  
  网络出版：2009-12-30，
  
  纸质出版：2009-12-30
- 稿件说明：
移动端阅览
郭洪英, 潘定珍, 范俊卿, 等. In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析[J]. 发光学报, 2009,30(6):797-801.

GUO Hong-ying, PAN Ding-zhen, FAN Jun-qing, et al. Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures[J]. Chinese Journal of Luminescence, 2009, 30(6): 797-801.
郭洪英, 潘定珍, 范俊卿, 等. In_xGa_1-xN/In_yGa_1-yN多量子阱结构发光特性的测量与分析[J]. 发光学报, 2009,30(6):797-801. DOI：

GUO Hong-ying, PAN Ding-zhen, FAN Jun-qing, et al. Characterization and Analysis on the Optical Properties of In_xGa_1-xN/In_yGa_1-yN Multiple Quantum Well Structures[J]. Chinese Journal of Luminescence, 2009, 30(6): 797-801. DOI：

摘要

利用MOCVD方法在蓝宝石衬底上生长了In

1-x

N/In

1-y

N多量子阱结构外延层

并用变温光致发光(PL)光谱、选择激发光谱以及激发(PLE)光谱等手段研究了该结构的量子效率、多峰效应的起源以及峰位随温度变化等信息。变温PL光谱的结果表明:在温度从30 K变化到300 K时

其峰值强度只下降了1.36倍且发光波长发生了蓝移。通过选择激发光谱证明了其发光峰位的独立性。PLE结果表明了GaN和势垒层的Stokes位移很小

但是In

1-x

N阱层的Stokes位移变化很大。同时

提出了一种可同时获得多个吸收边的数据处理方法。

Abstract

The In

1-x

N/In

1-y

N multiple quantum well structures were grown on sapphire substrate by metal-organic chemical vapor deposition (MOCVD). The quantum efficiency

multi-emission peaks effects and peak-shift information were observed by temperature dependent photoluminescence (PL) spectra

selective excitation PL spectra and PL excitation spectra. The temperature dependent PL spectra showed that the intensity of the main emission peaks decreased only by a factor of 1.36 and peak position has a blue-shift when temperature increases in 30~300 K. Selective excitation PL spectra showed that every peak appeared in PL spectra is separate. The PLE result shows a small Stokes shift for GaN and barrier layer while it is larger for the well layers. A fitting method was also suggested to obtain several absorption edges simultaneously.

关键词

Keywords

references

. Pearton S J, Zolper J C, Shul R J, et al. GaN: Processing, defects, and devices [J]. J. Appl. Phys., 1999, 86 (1):1-78.

. Nakamura S, Chichibu S F. Introduction to Nitride Semiconductor Blue Lasers and Light Emitting Diodes [M]. London:CRC Press, 2000, 1-25.

. Hamzaoui H, Bouazzi A S, Rezig B. Theoretical possibilities of InxGa1-xN tandem PV structures [J]. Solar Energy Materials and Solar Cells, 2005, 87 (1-4):595-603.

. Neff H, Semchinova O K, Lima A M N, et al. Photovoltaic properties and technological aspects of In1-xGaxN/Si, Ge (0<x<0.6) heterojunction solar cells [J]. Solar Energy Materials and Solar Cells, 2006, 90 (7-8):982-997.

. Lin Wei, Li Shuping, Kang Junyong. Micro characteristics of InGaN/GaN quantum wells [J]. Chin. J. Lumin. (发光学报), 2007, 28 (1):99-103 (in English).

. Wang Yue, Shi Wei, Yuan Jinshe, et al. Photoluminescence and optical absorption properties of InGaN/GaN single quantum well grown by MOVPE [J]. Chin. J. Lumin. (发光学报), 2007, 28 (3):407-411 (in English).

. Zhu Youzhang, Chen Guangde, Yuan Jinshe. Investigationon of optical and micro-structure properties of InxGa1-xN allcys grown by MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):318-324 (in English).

. Liao Hui, Chen Weihua, Li Ding, et al. Microscopic structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based quantum well [J]. Chin. J. Lumin. (发光学报), 2008, 29 (5):789-795 (in English).

. Ho I H, Stringfellow G B. Solid phase immiscibility in GaInN [J]. Appl. Phys. Lett., 1996, 69 (18):2701-2703.

. Sun Y, Cho Y H, Suh E K, et al. Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells:An important role of effective carrier transfer [J]. Appl. Phys. Lett., 2004, 84 (1):49-51.

. ODonnell K P, Martin R W, Middleton P G. Origin of luminescence from InGaN diodes [J]. Phys. Rev. Lett., 1999, 82 (1):237-240.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

有机源载气对MOCVD生长InGaN薄膜的影响研究

一步法原位合成Cs₂NaInCl₆@PVDF薄膜：掺杂调控与光学性能

一种提升LED光输出稳定性的有机-无机锰卤化物及其亮度优化

Er³⁺掺杂AlScN薄膜发光及铁电性能的协同调控

Sr₃AlO₄F∶Eu³⁺，Dy³⁺，Na⁺发光材料性能