离子注入诱导的具有两个不同发射波长的混合双量子阱结构

陈 杰; 刘国营; 罗时军; 吴波英; 彭菊村; 赵 杰; 胡永金; 张西平

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离子注入诱导的具有两个不同发射波长的混合双量子阱结构

论文 | 更新时间：2020-08-12

- 离子注入诱导的具有两个不同发射波长的混合双量子阱结构
- Ion-implantation-induced Intermixing of Double Quantum Wells with Different Emission Wavelengths
- 发光学报 2009年30卷第5期页码：575-579
- 作者机构：
  
  1. 湖北汽车工业学院理学系, 湖北十堰 442002
  2. 孝感学院物理与电子信息学院, 湖北孝感 432100
  3. 天津师范大学物理与电子信息学院, 天津 300074
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O472.3;TN304.23
- 收稿日期：2008-10-24，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-10-30，
  
  纸质出版日期：2009-10-30
- 稿件说明：
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陈杰, 刘国营, 罗时军, 等. 离子注入诱导的具有两个不同发射波长的混合双量子阱结构[J]. 发光学报, 2009,30(5):575-579.

CHEN Jie, LIU Guo-ying, LUO Shi-jun, et al. Ion-implantation-induced Intermixing of Double Quantum Wells with Different Emission Wavelengths[J]. Chinese journal of luminescence, 2009, 30(5): 575-579.
陈杰, 刘国营, 罗时军, 等. 离子注入诱导的具有两个不同发射波长的混合双量子阱结构[J]. 发光学报, 2009,30(5):575-579. DOI：

CHEN Jie, LIU Guo-ying, LUO Shi-jun, et al. Ion-implantation-induced Intermixing of Double Quantum Wells with Different Emission Wavelengths[J]. Chinese journal of luminescence, 2009, 30(5): 575-579. DOI：

摘要

叙述了磷离子注入方法诱导具有不同发射波长的InGaAsP双量子阱结构的混合

并通过光致发光谱和断面透射电子显微术对量子阱混合的程度进行了研究。在特定条件下快速热退火处理后

光致发光谱显示

在离子注入剂量低于7×10

/cm

情况下

两个阱的谱峰能保持较好的分离

注入剂量从10

/cm

增大到10

/cm

的过程中

两个阱的带隙蓝移值都似乎存在一个极大值

并且在同样的条件下

上阱(发射波长为1.52 μm)的带隙蓝移值较下阱(发射波长为1.59 μm)大些。当离子注入剂量达到10

/cm

时

上阱的谱峰近乎消失

双阱光致发光谱出现了一个谱峰。用断面透射电子显微术对原生长样品与带隙蓝移具有极大值的退火样品进行微结构比较

结果显示

对比原生长样品

退火样品的晶格原子基本得到修复

但阱与垒间的界面显得模糊

这说明离子注入导致两阱完全混合。

Abstract

In this work

phosphorus ion-implantation-induced intermixing of InGaAsP double quantum wells (DQWs) with different emission wavelengths was investigated by photoluminescence (PL) spectrum and cross-sectional transmission electron microscopy (TEM). After thermal annealing under specific conditions

the PL showed that the PL peaks of both wells always remain well separate under the condition of a low implanting dose (less than 7×10

/cm

)

the bandgap blue-shift for each well appears a maximum as the implantation doses are increased from 10

to 10

/cm

and the blue-shift from the upper quantum well (QW) is larger than that from the lower QW under the same conditions of implantation and annealing. When the ion dose is 10

/cm

the PL peak of the upper QW is nearly negligible and the peaks from DQWs appear to combine together as one peak. Comparing as-grown sample with annealed sample appearing maximum blue-shift by cross-sectional TEM

the boundaries of annealed sample between wells and barriers become vague

indicating that the ion implantation results in a total intermixing of two wells.

关键词

Keywords

references

. Paquette M, Beauvais J, Beerens J, et al. Blueshifting of InGaAsP/InP laser diodes by low-energy ion implantation [J]. Appl. Phys. Lett., 1997, 71 (26):3749-3751.

. Ooi B S, Tang Y S, Saher Helmy, et al. Optical characterization of GaAs/AlGaAs quantum well wires fabricated using arsenic implantation induced intermixing [J]. J. Appl. Phys., 1998, 83 (8):4526-4530.

. Kim H S, Park J W, Oh D K, et al. Quantum well intermixing of In1-xGaxAs/InP and In1-xGaxAs/In1-xGaxAs1-yPy multiple-quantum-well structures by using the impurity-free vacancy diffusion technique [J]. Semicond. Sci. Technol., 2000, 15 (10):1005-1009.

. Wurentuya Debulefu, Zhao Fengqi. Energy of polaron in wurtzite GaN/AlxGaxN1-x quantum well [J]. Chin. J. Lumin. (发光学报), 2008, 29 (1):10-14 (in Chinese).

. Wang Yue, Shi Wei, Yuan Jinshe, et al. Photoluminescence and optical absorption properties of InGaN/GaN single quantum well grown by MOVPE [J]. Chin. J. Lumin.(发光学报), 2007, 28 (3):407-411 (in Chinese).

. Djie H S, Ooi B S, Aimez V. Neutral ion-implantation-induced selective quantum-dot intermixing [J]. Appl. Phys. Lett., 2005, 87 (26):261102-1-3.

. Zhang S S, Thompson D A, Robinson B J. Quantum well intermixing enhanced by InP grown by He-plasma assisted GaS source MBE [J]. Semicond. Sci. Technol., 2003, 18 (6):535-540.

. Teng J H, Dong J R, Chua S J, et al. Controlled group Ⅴ intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers [J]. J. Appl. Phys., 2002, 92 (8):4330-4335.

. Gordon B E, Lee A S W, Thompson D A, et al. Quantum well intermixing in InGaAsP laser structures using a low tempe-rature grown InP cap layer [J]. Semicond. Sci. Technol., 2003, 18 (8):782-787.

. Chapman D C, Rieth LW, Stringfellow G B, et al. The use of nitrogen to disorder GaInP [J]. J. Appl. Phys., 2004, 95 (11):6145-6151.

. Takamura Y, Marshall A F, Mehta A, et al. Diffuse X-ray scattering and transmission electron microscopy study of defects in antimony-implanted silicon [J]. J. Appl. Phys., 2004, 95 (8):3968-3976.

. Herrera M, González D, Hopkinson M, et al. Influence of growth temperature on the structural and optical quality of GaInNAs/GaAs multi-quantum wells [J]. Semicond. Sci. Technol., 2004, 19 (7):813-818.

. Zheng Weimin, Lu Yingbo, Song Shumei, et al. Photoluminescence study of the acceptor binding energy in GaAs/AlAs quantum wells [J]. Chin. J. Lumin.(发光学报), 2008, 29 (1):156-160 (in Chinese).

. Zhu Youzhang, Chen Guangde, Yuan Jinshe. Investigation on optical and micro-structural properties of InxGa1-xN alloys grown by MOCVD [J]. Chin. J. Lumin. (发光学报), 2008, 29 (2):318-324 (in Chinese).

. Liao Hui, Chen Weihua, Li Ding, et al. Microscopic structure of Al0.15In0.01Ga0.84N/In0.2Ga0.8N and In0.2Ga0.8N/GaN of GaN-based quantum well [J]. Chin. J. Lumin.(发光学报), 2008, 29 (5):789-794 (in Chinese).

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