Ce<SUP>3+</SUP>注入对不同尺寸的nc-Si/SiO<SUB>2</SUB> 超晶格发光特性的影响

杜玙璠; 衣立新; 王申伟; 邬 洋

doi:null

您当前的位置：

首页 >

文章列表页 >

Ce³⁺注入对不同尺寸的nc-Si/SiO₂ 超晶格发光特性的影响

论文 | 更新时间：2020-08-12

- Ce³⁺注入对不同尺寸的nc-Si/SiO₂ 超晶格发光特性的影响
- Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation
- 发光学报 2009年30卷第3期页码：417-420
- 作者机构：
  
  北京交通大学光电子技术研究所, 发光与光信息技术教育部重点实验室北京,100044
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O482.31
- 收稿日期：2008-12-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-06-30，
  
  纸质出版日期：2009-06-30
- 稿件说明：
移动端阅览
杜玙璠, 衣立新, 王申伟, 等. Ce³⁺注入对不同尺寸的nc-Si/SiO₂ 超晶格发光特性的影响[J]. 发光学报, 2009,30(3):417-420.

DU Yu-fan, YI Li-xin, WANG Shen-wei, et al. Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation[J]. Chinese journal of luminescence, 2009, 30(3): 417-420.
杜玙璠, 衣立新, 王申伟, 等. Ce³⁺注入对不同尺寸的nc-Si/SiO₂ 超晶格发光特性的影响[J]. 发光学报, 2009,30(3):417-420. DOI：

DU Yu-fan, YI Li-xin, WANG Shen-wei, et al. Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation[J]. Chinese journal of luminescence, 2009, 30(3): 417-420. DOI：

摘要

通过电子束蒸发方法以及高温退火处理

得到nc-Si/SiO

超晶格。将样品分别注入剂量为2.0×10

-2

和2.0×10

-2

的Ce

再对其进行二次退火处理

获得多组样品。通过对样品光致发光光谱的分析发现

样品发光强度的变化不仅受到Ce

注入剂量的影响

而且也受到nc-Si颗粒大小的影响。在相同注入计量和相同的二次退火处理温度下

nc-Si颗粒较大的样品经Ce

注入后其发光强度增强较为明显。

Abstract

In this paper

SiO/SiO

superlattices samples were prepared on Si substrates by electron beam evaporation

and the thicknesses of SiO layers are 2 nm and 4 nm

4 nm for all the SiO

layers. The samples were annealed in nitrogen atmosphere at high temperature subsequently. And then

with a dose of 2.0×10

-2

and 2.0×10

-2

respectively was implanted into these samples with formed Si nanocrystals. After Ce

doped

the samples were re-annealing at 600 ℃. The photoluminescence (PL) spectra were observed by the fluorescence spectrometry. The PL spectra showed that the PL intensities of samples were not only dependent on the re-annealing temperature and the dose of Ce

but also dependent on the size of nc-Si. The experiment results proved that when the size of nc-Si is 4 nm; the effect of energy transfer between Ce

and nc-Si is more distinct.

关键词

Keywords

references

. Canham L T. Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers [J]. Appl. Phys. Lett., 1990, 57 (10):1046-1048.

. Lockwood D J, Lu Z H, Baribeau J M. Quantum confined luminescence in Si/SiO2 superlattices [J]. Phys. Rev. Lett., 1996, 76 (3):539-541.

. Gourbilleau F, Portier X, Ternon C, et al. Si-rich/SiO2 nanostructured multilayers by reactive magnetron sputtering [J]. Appl. Phys. Lett., 2001, 78 (20):3058-3060.

. Wilkinson A R, Elliman R G. Passivation of Si nanocrystals in SiO2: Atomic versus molecular hydrogen [J]. Appl. Phys. Lett., 2003, 83 (26):5512-5514.

. Cheyan S, Elliman R G. Effect of particle size on the photoluminescence from hydrogen passivated Si nanocrystals in SiO2 [J]. Appl. Phys. Lett., 2001, 78 (13):1912-1914.

. Hu Feng, Yi Lixin, Wang Shenwei, et al. Influence of sputtering Ar/O proportion and annealing method on the preparation and photoluminescent properties of silicon nanocrystals [J]. Chin. J. Lumin.(发光学报), 2009, 30 (2):243-246 (in Chinese).

. Chen Enguang, Yi Lixin, Wang Shenwei, et al. Effect of hydrogen passivation on photoluminescence intensity of Si nanocrystals [J]. Spectrosc. Spectral Anal. (光谱学与光谱分析), 2008, 28 (2):246-248 (in Chinese).

. Du Yufan, Yi Lixin, Wang Shenwei, et al. Effect of Ce3+ implantation on photoluminescence intensity of Si nanocrystals embedded in superlattices [J]. Spectrosc. Spectral Anal. (光谱学与光谱分析), 2009, 29 (6):1486 (in Chinese).

. Yi L X, Heitmann J, Scholz R, et al. Si rings, Si clusters, and Si nanocrystals-different states of ultrathin SiOx layers [J]. Appl. Phys. Lett., 2002, 81 (22):4248-4250.

. Wang Shenwei, Yi Lixin, Su Mengchan, et al. A study of depositing amorphous SiO films vis magnetron sputtering by FTIR method [J]. Spectrocs. Spectral Anal. (光谱学与光谱分析), 2007, 27 (3):456-459 (in Chinese).

. Yi L X, Scholz R, Zacharias M. Size and density control of Si nanocrystals realized by SiOx/SiO2 superlattice [J]. J. Lumin., 2007, 122-123 :750-752.

. Yi L X, Heitmann J, Scholz R, et al. Phase separation of thin SiO layers in amorphous SiO/SiO2 superlattices during annealing [J]. J. Phys.: Condens. Matter, 2003, 39 (15):S2887-S2896.

. Heitmann J, Muller F, Yi L X, et al. Excitons in Si nanocrystals: Confinement and migration effects [J]. Phys. Rev. B, 2004, 69 (19):195309-1-7.

浏览量

118

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

MgZnO薄膜及其量子阱和超晶格的发光特性

一种提升LED光输出稳定性的有机-无机锰卤化物及其亮度优化

Er³⁺掺杂AlScN薄膜发光及铁电性能的协同调控

Sr₃AlO₄F∶Eu³⁺，Dy³⁺，Na⁺发光材料性能

光致发光气凝胶研究进展

Ce3+注入对不同尺寸的nc-Si/SiO2 超晶格发光特性的影响

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO2 Superlattices after Ce3+ Implantation

DOI：

摘要

Abstract

关键词

Keywords

references

Ce³⁺注入对不同尺寸的nc-Si/SiO₂ 超晶格发光特性的影响

Effect of Si Nanocrystals Size on Photoluminescence Intensity of Si Nanocrystals Embedded in Si/SiO₂ Superlattices after Ce³⁺ Implantation