阳极/有机层界面LiF层在OLED中的空穴缓冲作用

武春红; 张靖磊; 刘彭义; 侯林涛

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阳极/有机层界面LiF层在OLED中的空穴缓冲作用

论文 | 更新时间：2020-08-12

- 阳极/有机层界面LiF层在OLED中的空穴缓冲作用
- Effect of LiF Buffer Layer Used at Interface between Anode and Organic Layer in Organic Light-emitting Diode
- 发光学报 2009年30卷第1期页码：55-58
- 作者机构：
  
  暨南大学物理系,广东广州,510632
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN383.1;TN873.3
- 收稿日期：2008-08-25，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-02-20，
  
  纸质出版日期：2009-02-20
- 稿件说明：
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武春红, 张靖磊, 刘彭义, 等. 阳极/有机层界面LiF层在OLED中的空穴缓冲作用[J]. 发光学报, 2009,30(1):55-58.

WU Chun-hong, ZHANG Jing-lei, LIU Peng-yi, et al. Effect of LiF Buffer Layer Used at Interface between Anode and Organic Layer in Organic Light-emitting Diode[J]. Chinese journal of luminescence, 2009, 30(1): 55-58.
武春红, 张靖磊, 刘彭义, 等. 阳极/有机层界面LiF层在OLED中的空穴缓冲作用[J]. 发光学报, 2009,30(1):55-58. DOI：

WU Chun-hong, ZHANG Jing-lei, LIU Peng-yi, et al. Effect of LiF Buffer Layer Used at Interface between Anode and Organic Layer in Organic Light-emitting Diode[J]. Chinese journal of luminescence, 2009, 30(1): 55-58. DOI：

摘要

使用真空热蒸发镀膜法

在OLED层状结构中引入不同厚度的LiF作阳极修饰层

制备了结构为ITO/LiF/TPD/Alq

/Al的器件。LiF超薄层的引入较好地修饰了ITO表面

减少了阳极和有机层界面缺陷态的形成

增强了器件的稳定性。实验结果表明: LiF层有效地阻挡空穴注入

增强载流子注入平衡

提高了器件的亮度和效率

含有1 nm厚LiF空穴缓冲层器件的性能最好

效率较不含缓冲层器件提高了近1.5倍。

Abstract

Tremendous progress has been made in the science and technology of organic light-emitting diode in developing flat panel displays. OLED efficiency and lifetime are the primary issues limiting the widespread commercial use. To solve the problem

finding out novel materials and applying new structure are usual methods. The degradation of the interfaces between electrode and organic layer is also an important factor for the stability. Up to now

different treatment both physical and chemical technique has been used to modify the interface

and also

there is a good choice of inserting a nano-layer into the interface. Organic light-emitting diodes inserted LiF film

which usually is used for cathode modifying layer

between anode and organic layer were fabricated by vapor thermal deposition. The structure of the diode is ITO /LiF /TPD(30 nm)/Alq3(40 nm)/Al(100 nm) (TPD:N

N'-diphenyl-N

N'-bis(3-methylphenyl )-1

1' -biphenyl-4

4'-diamine

Alq3: tris(8-quinolinolato)- aluminum)

and the thicknesses of the LiF film are 0.5

1.0

1.5 and 2.0 nm detected by INFCON XTM/2 deposition monitor. The insertion of the ultra-thin LiF layer between ITO and organic layer improves the photoelectric characteristics of the diodes directly

which blocks the hole injection and improves the efficiency of the diodes. Firstly

the ITO surface is smoothed after depositing a LiF film and that may reduces the formation of non-emissive traps and block the diffusion of In+ ion from ITO to organic layer. The efficient recombination of holes and electrons in emissive layer improves the luminance and efficiency. Secondly

the LiF buffer layer can blocks hole injection and improves the properties of the diodes

however

a thicker LiF layer can reduce the characteristic of the diodes and it was necessary to optimize the LiF thickness. Finally

it was found that the luminance and efficiency of the diode are maximized when 1.0 nm LiF hole buffer layer is inserted between ITO and TPD.

关键词

Keywords

references

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