ZnO was deposited on glass under NH3 gas ambience using electronic beam evaporation. AFM measurements indicate that the roughness of N-doped ZnO is a little bit higher than undoped ZnO

and it increases as the pressure of NH3 rises. However

the ZnO surface remains smooth. XRD measurement shows that the (0002) diffraction peaks remain constant for the different N-doped samples. The width of diffraction peak of N doped ZnO is 0.427°

which is a slightly broader than 0.261°of undoped ZnO. The resistivity of N-doped ZnO increases 4 to 7 times in magnitudes

which indicates the realization of reducing electronic concentration in ZnO films.