Patterned ZnO film seed layer was fabricated on the Si substrates by optical photolithography and pulsed laser deposition. The patterned and vertically aligned ZnO nanowires units with a minimum diameter of 30 μm were synthesized via vapor phase transport or hydrothermal growth method. X-ray diffraction analysis shows the nanowires are single crystal with

c

-axis [001] preferred orientation. The patterns of ZnO nanowires arrays are clear and the boarder is well ordered from the scanning electron microscopy (SEM) images. The photoluminescence (PL) spectra at room temperature of ZnO nanowires exhibit the strong emission at the wavelength 380 nm

the emissions in visible region were restrained

which indicates the good crystallity of ZnO nanowires with few defects. Through field electron emission test

a turn-on field and a threshold field of 2.3 and 4.2 V·μm

-1

were achieved

which indicate that the patterned vertically aligned ZnO nanowires posses good field emission property.