Co,Cu共掺杂ZnO薄膜的结构及发光特性

李爱侠; 毕红; 刘艳美; 吴明在

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Co,Cu共掺杂ZnO薄膜的结构及发光特性

论文 | 更新时间：2020-08-12

- Co,Cu共掺杂ZnO薄膜的结构及发光特性
- Structure and Optical Properties of (Co,Cu)-codoped ZnO Thin Films
- 发光学报 2008年29卷第2期页码：289-293
- 作者机构：
  
  1. 安徽大学, 物理与材料科学学院, 安徽省信息材料与器件重点实验室,安徽合肥,230039
  2. 安徽大学, 化学化工学院,安徽合肥,230039
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(20401001)()
- DOI：
  中图分类号： O484;O482.31
- 收稿日期：2007-09-29，
  
  修回日期：2007-11-28，
  
  纸质出版日期：2008-03-20
- 稿件说明：
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李爱侠, 毕红, 刘艳美, 吴明在. Co,Cu共掺杂ZnO薄膜的结构及发光特性[J]. 发光学报, 2008,29(2): 289-293

LI Ai-xia, BI Hong, LIU Yan-mei, WU Ming-zai. Structure and Optical Properties of (Co,Cu)-codoped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2008,29(2): 289-293
李爱侠, 毕红, 刘艳美, 吴明在. Co,Cu共掺杂ZnO薄膜的结构及发光特性[J]. 发光学报, 2008,29(2): 289-293 DOI：

LI Ai-xia, BI Hong, LIU Yan-mei, WU Ming-zai. Structure and Optical Properties of (Co,Cu)-codoped ZnO Thin Films[J]. Chinese Journal of Luminescence, 2008,29(2): 289-293 DOI：

摘要

采用电子束蒸发沉积成膜工艺在单晶Si(111)衬底上制备出Co

Cu共掺杂的Zn

0.85-x

0.15

O(x=0

0.04

0.06)多晶膜。采用X射线衍射(XRD)研究了Co、Cu掺杂对其微结构的影响;室温下测量了Zn

0.85-x

0.15

O薄膜的光致发光谱

发现随着Cu掺杂量的增加

样品发光增强

当Cu掺杂x=0.06时

0.85-x

0.15

O薄膜的PL谱中出现了较强的双峰蓝光发射;分析了掺杂含量对其发光性能的影响

并对样品的发光机制进行了探讨

并推断出蓝光峰来源于电子由导带底到锌空位(VZn)能级的跃迁及锌填隙(Zni)能级到价带顶的跃迁。

Abstract

Over the past few years

wide and direct band gap semiconductors have been intensively studied for their application as blue and ultraviolet light emitters. As a wide gap semiconductor

ZnO has a wide band gap of 3.37 eV and a large binding energy of 60 meV. Therefore

ZnO is considered as one of the most pro-mising candidates for short wavelength optoelectronics devices

and it is very important to conduct further studies of the properties of ZnO thin films.(Co

Cu)-codoped ZnO thin films

0.85-x

0.15

O(x=0

0.04

0.06)thin films were deposited on silicon(111) substrates by e-beam evaporation.The structure of Zn

0.85-x

0.15

O thin films were investigated using X-ray diffractometer (XRD). Photoluminescent (PL) spectra were measured with Xe lamp excitation light source at room temperature

the excited wavelength was 325 nm.The photoluminescence spectrum reveals that with the increase of doping content of Cu

the emission intensity of Zn

0.85-x

0.15

O thin films was enhanced. Moreover

with x=0.06

strong blue double emission peaks were got at 449 nm and at 477 nm for the Zn

0.85-x

0.15

O thin films. The luminescence mechanism was also discussed in this paper

The experiments prove that the blue emission is due to transition of electrons from the bottom of the conductor band to zinc vacancy VZn or interstitial zinc Zni to the top of valence band.

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