n型InP(100)衬底上电沉积氧化锌薄膜的制备及光致发光

翁占坤; 刘爱民; 刘艳红; 胡增权

doi:null

您当前的位置：

首页 >

文章列表页 >

n型InP(100)衬底上电沉积氧化锌薄膜的制备及光致发光

论文 | 更新时间：2020-08-12

- n型InP(100)衬底上电沉积氧化锌薄膜的制备及光致发光
- Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition
- 发光学报 2008年29卷第2期页码：283-288
- 作者机构：
  
  1. 长春理工大学, 生命科学技术学院,吉林长春,130022
  2. 大连理工大学, 三束国家重点实验室, 物理与光电工程学院,辽宁大连,116024
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(60306001)()
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2007-08-25，
  
  修回日期：2007-11-15，
  
  纸质出版日期：2008-03-20
- 稿件说明：
移动端阅览
翁占坤, 刘爱民, 刘艳红, 胡增权. n型InP(100)衬底上电沉积氧化锌薄膜的制备及光致发光[J]. 发光学报, 2008,29(2): 283-288

WENG Zhan-kun, LIU Ai-min, LIU Yan-hong, HU Zeng-quan. Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition[J]. Chinese Journal of Luminescence, 2008,29(2): 283-288
翁占坤, 刘爱民, 刘艳红, 胡增权. n型InP(100)衬底上电沉积氧化锌薄膜的制备及光致发光[J]. 发光学报, 2008,29(2): 283-288 DOI：

WENG Zhan-kun, LIU Ai-min, LIU Yan-hong, HU Zeng-quan. Photoluminescence and Formation of ZnO Thin Films on n-InP(100) by Electrodeposition[J]. Chinese Journal of Luminescence, 2008,29(2): 283-288 DOI：

摘要

采用电化学沉积方法在n型InP(100)(1016)衬底上制备了氧化锌薄膜。探索线性扫描伏安法确定InP与0.1mol/LZn(NO

)

电解液的体系中沉积氧化锌的极化电势

在20℃溶液中

相对于甘汞电极(SCE)的极化电势为-1.1877V。扫描电镜照片显示:随着应用电势的降低

氧化锌薄膜变得紧密平滑;狭窄的X射线衍射峰也说明低电势下薄膜的结晶质量较好。光荧光表征发现低电势下制备的氧化锌薄膜具有良好的发光特性。

Abstract

The ZnO thin films are fabricated by electrodeposition on n-type InP wafers at constant potential. Polarization potential of the deposition of ZnO is firstly confirmed using linear sweep voltammetry in 0.1 mol/L Zn(NO

)

electrolyte/InP system

which is -1.187 7 V vs. SCE at 20℃. Scanning electron microscopy shows that the thin films become smooth and compact with decreasing applied potential

and the narrow X-ray diffraction peaks also show the good crystal quality of the thin films. The optical properties of ZnO thin films are studied by photoluminescence spectrum measurements. The ZnO thin films obtained at low potential exhibits good photoluminescence.

关键词

Keywords

references

Huang M H,Mao S,Feick H,et al.Room-temperature ultraviolet nanowire nanolasers[J].Science,2001,292(5523):1897-1899.

Wei Z P,Lu Y M,Shen D Z,et al.Room temperature p-n ZnO blue-violet light-emitting diodes[J].Appl.Phys.Lett.,2007,90(4):042113-1-3.

Xie Lunjun,Chen Guangde,Zhu Youzhang,et al.Photoluminescence characteristics of ZnO film grown by laser-MBE method[J].Chin.J.Lumin.(发光学报),2006,27(2):215-220 (in Chinese).

Du G T,Ma Y,Zhang Y T,et al.Preparation of intrinsic and N-doped p-type ZnO thin films by metalorganic vapor phase epitaxy[J].Appl.Phys.Lett.,2005,87(21):213103-1-3.

Meng Xiangdong,Lin Bixia,Hong Liang,et al.Potoluminescence properties for ZnO films grown by two-step CVD[J].Chin.J.Lumin.(发光学报),2006,27(5):792-796 (in Chinese).

Li X N,Asher S E,Limpijumnong S,et al.Unintentional doping and compensation effects of carbon in metal-organic chemical-vapor deposition fabricated ZnO thin films[J].J.Vac.Sci.Technol.A,2006,24(4):1213-1217.

Bian J M,Li X M,Gao X D,et al.Deposition and electrical properties of N-In codoped p-type ZnO films by ultrasonic spray pyrolysis[J].Appl.Phys.Lett.,2004,84(4):541-543.

Zhao Junliang,Li Xiaomin,Gu Yanfei,et al.Effect of seeding layer on the crystal quality and photoelectric property of ZnO films grown by spray pyrolysis[J].Chin.J.Lumin.(发光学报),2006,27(6):933-938 (in Chinese).

Izaki M,Omi T.Electrolyte optimization for cathodic growth of zinc oxide films[J].J.Electrochem.Soc.,1996,143(3):L53-L55.

Regan B O',Schwartz D T,Zakeeruddin S M,et al.Electrodeposited nanocomposite n-p heterojunctions for solid-state dye-sensitized photovoltaics[J].Adv.Mater.,2000,12(17):1263-1267.

Pauporte T,Lincot D.Electrodeposition of semiconductors for optoelectronic devices:results on zinc oxide[J].Electrochimica Acta,2000,45(20):3345-3353.

Machado G,Guerra D N,Leinen D,et al.Indium doped zinc oxide thin films obtained by electrodeposition[J].Thin Solid Films,2005,490(2):124-131.

Xu L F,Guo Y,Liao Q,et al.Morphological control of ZnO nanostructures by electrodeposition[J].J.Phys.Chem.B,2005,109(28):13519-13522.

Marotti R E,Guerra D N,Bello C,et al.Bandgap energy tuning of electrochemically grown ZnO thin films by thickness and electrodeposition potential[J].Solar Energy Materials and Solar Cells,2004,82(1-2):85-103.

Cui J B,Gibson U J.Electrodeposition and room temperature ferromagnetic anisotropy of Co and Ni-doped ZnO nanowire arrays[J].Appl.Phys.Lett.,2005,87(13):133108-1-3.

Goux A,Pauporte T,Chivot J,et al.Temperature effects on ZnO electrodeposition[J].Electrochimica Acta,2005,50(11):2239-2248.

Sun Y,Ketterson J B,Wong G K L.Excitonic gain and stimulated ultraviolet emission in nanocrystalline zinc-oxide powder[J].Appl.Phys.Lett.,2000,77(15):2322-2324.

Bylander E G.Surface effects on the low-energy cathodoluminescence of zinc oxide[J].J.Appl.Phys.,1978,49(3):1188-1195.

Liu M,Kitai A H,Mascher P.Point defects and luminescence centers in zinc oxide doped with manganese[J].J.Lumin.,1992,54(1):35-42.

Look D C,Hemsky J W,Sizelove J R.Residual native shallow donor in ZnO[J].Phys.Rev.Lett.,1999,82(12):2552-2555.

Lin B X,Fu Z X,Jia Y B.Green luminescent center in undoped zinc oxide films deposited on silicon substrates[J].Appl.Phys.Lett.,2001,79(7):943-945.

Weiss B L,Welss B L.Properties of Indium Phosphide[M].New York:Institution of Engineering and Technology,1991,5.

Sun Y M.FP-LMTO study on the electronic structure of ZnO and its defects[D].the Ph.D.thesis,University of Science and Technology of China,2000 (in Chinese).

浏览量

300

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

Fe掺杂ZnO纳米薄膜的光致发光

Zn_1-xCd_xS合金薄膜的结构和光学性质

硝酸铟诱导的电沉积氧化锌纳米柱光学性质裁剪

射频等离子硫钝化GaAs(100)的表面特性

电沉积掺铝氧化锌纳米柱的光学带隙蓝移与斯托克斯位移