Single crystal sapphire (Al

2

O

3

) samples were irradiated by

208

Pb

27+

ions with energy of 230 MeV to the fluences ranging from 2×10

12

to 5×10

14

ions/cm

2

and subsequently annealed at 600

900 and 1100 K temperature. The modification of structure and optical properties induced by ion irradiation were analyzed using photoluminescence(PL)and Fourier Transform infrared(FTIR)spectra measurements. The PL measurements showed that absorption peaks located at 390 nm and 450 nm appeared in irradiated samples

the PL intensities reached up to the maximum for the sample irradiated with the fluence of 1×10

13

ions/cm

2

. The peak of 380 nm became very intensive after 600 K anneal and other peaks are very weak. After annealing at 900 K

the peak of 380 nm weaken and 360 nm

510 nm peak start buildup

the peak of 380 nm entirely vanished and 360 nm

510 nm peak increasing along with annealing temperature at 1100 K. From the obtained FTIR spectra

it was found that Pb-ion irradiation induced broadening of the absorption band in 460~510 cm

-1

and position shift of the absorption band in 1000~1300 cm

-1

towards to high wavenumber. Those indicated that the vibration structure affected by Xe ion irradiation. The possible mechanism of damage in single crystal sapphire induced by irradiation was briefly discussed.