MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性

王玥; 施卫; 苑进社; 贺训军; 胡辉; 姬广举

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MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性

论文 | 更新时间：2020-08-11

- MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性
- Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE
- 发光学报 2007年28卷第3期页码：407-411
- 作者机构：
  
  1. 西安理工大学, 理学院, 应用物理系,陕西西安,710048
  2. 哈尔滨理工大学, 电子科学与技术系,黑龙江哈尔滨,150080
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目(10474078)()
- DOI：
  中图分类号： O472.3;O482.31
- 收稿日期：2007-02-01，
  
  修回日期：2007-03-24，
  
  纸质出版日期：2007-05-20
- 稿件说明：
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王玥, 施卫, 苑进社, 贺训军, 胡辉, 姬广举. MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性[J]. 发光学报, 2007,28(3): 407-411

WANG Yue, , SHI Wei, YUAN Jin-she, HE Xun-jun, HU Hui, JI Guang-ju. Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE[J]. Chinese Journal of Luminescence, 2007,28(3): 407-411
王玥, 施卫, 苑进社, 贺训军, 胡辉, 姬广举. MOVPE生长的InGaN/GaN单量子阱的光致发光和光吸收特性[J]. 发光学报, 2007,28(3): 407-411 DOI：

WANG Yue, , SHI Wei, YUAN Jin-she, HE Xun-jun, HU Hui, JI Guang-ju. Photoluminescence and Optical Absorption Properties of InGaN/GaN Single Quantum Well Grown by MOVPE[J]. Chinese Journal of Luminescence, 2007,28(3): 407-411 DOI：

摘要

研究了用金属有机物气相外延(MOVPE)法在蓝宝石衬底上生长的In组分浓度保持不变的InGaN/GaN单量子阱结构在室温下的发光特性和光吸收特性.实验结果表明

在InGaN厚度

3nm时

随着样品InGaN势阱层宽度的增加(1nm)

光致发光(PL)谱的发光峰值波长出现明显的红移33nm现象

而且发光强度下降8%

谱线半峰全宽(FWHM)展宽

通过对样品的透射、反射光谱研究发现

量子阱层窄(1.5nm)的样品在波长接近红外区时出现无吸收的现象

即

达到了100%

而在阱层较宽的样品中没有发现这一现象

对引起这些现象的原因进行了讨论.这些结果有助于开发和优化三族氮化物半导体光电器件的进一步研究工作.

Abstract

Gallium nitride and its ternary alloys have been attracting much attention because of their unique physical and chemical properties and their great potentialities for semiconductor industrial applications

such as light emitting diodes(LEDs)

laser diodes(LDs) operating from green to ultraviolet(UV)

UV-detectors and microwave power devices. The primary object of this study is to investigate the influence of different thickness of Fixed-Indium-Content InGaN layer on the shift of the photoluminescence(PL) spectra and optical absorption of the whole system structure. Photoluminescence(PL) and absorption properties of the Fixed-Indium-Content InGaN/GaN heterojunction single quantum well (SQW) structures have been investigated using photoluminescence spectrum and ultraviolet-vi-sible spectrophotometer at room temperature

respectively. The films were grown by metal-organic vapor phase epitaxy (MOVPE)

using GaN buffer layer on sapphire substrates. The width of InGaN layer (<3nm) in the SQW was varied while keeping other growth parameters fixed. Sample A has an InGaN active layer of thickness 1.5nm

and Sample B has an InGaN active layer of thickness 2.5nm. Two samples were capped with a 25nm GaN layer. PL measurements show that the PL peak position (432nm in Sample A and 465nm in Sample B) was redshifted by 33nm

the intensity was reduced about 8%

and the full width at half maximum (FWHM) of PL spectrum increases with increasing (1nm) of the potential well layer width. The spectra of transmission and reflection show that transmission T is very high there can be only few reflection R as no absorption R+T exceeds 100% in the near infrared ranges for the sample with InGaN layer of thickness 1.5nm. The reasons of these results are discussed. The significance of these studies is multifold and these results provide further information of importance toward the design optimization of optoelectronic devices employing the Ⅲ-nitrides.

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references

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