Light-emitting diodes (LEDs) are a strong candidate for the next-generation general illumination applications. LEDs are making great strides in brightness performance and reliability; however

the barrier to widespread use in general illumination still remains the cost (dollars per lumen). For increasing the luminous flux of LED

the input power for chip of LED needs to be greater than before

and the thermal density inside LED will increase violently. However

the luminous efficiency and the life of chip will decrease at the high temperature condition

even the chip may be out of order or damaged. A good packaging technology is the way to solve the heat dissipation problem

but it is a challenge to develop this technology in the limited space of LED. The purpose of heat dissipating technology for LED is to decrease the working temperature of LED's chip. It is necessary to reduce the thermal resistance of LED package. The efficiency and reliability of solid-state lighting devices depends strongly on successful thermal management

because the junction temperature of the chip is the prime driver for effective operation. As the power density continues to increase

the integrity of the package electrical and thermal interconnects becomes extremely important.In this work

packaging experiments of high-power LEDs were studied using localized induction heating technique. The results show that

owing to the selectivity of induction heating with materials and geometry

only the electroless plated Cu-Sn alloy solder layer in chip area is heating and solder bonding between chip and copper-coated ceramic substrate is promised. Because of high thermal conductivity of Cu-Sn alloy

this novel packaging technique not only decrease the thermal resistance

making the p-n junction of LED kept at a low temperature even with a high current (four-fold of rated current)

but also decrease thermal stress and avoid the damage of the chip

all of which will improve the performance and reliability of LED.