Using the first-principles calculation with 64 and 128 atom supercells the geometric and electronic structures of InN quantum dots(QDs)embedded in wurtzite GaN were simulated.After optimizing the stress and total energies

electronic structures of the stable systems were further calculated.The electronic densities of states show distinguishing quantum-confine-effects along different axes.Moreover

the curves of energy band edge appear in InN QDs.Compared with the typical band-edge shape of quantum well under the polarization that leads to the separation of electrons and holes in space

we found that the separation problem could be eliminated due to the curves of energy band edge in QDs

which is favourable for enhancement of the transition probability of the electrons and holes.