The study of the temperature dependence of photoluminescence(PL)in self-assembled quantum dots(QDs)is essentially important for the realization of room temperature efficient photonic devices.The temperature dependence of photoluminescence in self-assembled QDs will be directly determined by the temperature dependence of carrier dynamics process in self-assembled QDs.As the temperature increases

the carriers will thermal escape into the wetting layer(WL)from the ground states of an ensemble of QDs with difference sizes and then some of them will be recaptured by other QDs

i.e

.carrier will transfer between the ensemble of QDs with difference sizes when the temperature increases.The temperature dependence of carrier dynamics process in self-assembled QDs was simulated with the steady-state rate equation model of carrier dynamics.The model takes into account the temperature depen-dence of the energy band gap of QDs material.The PL spectra of self-assembled QDs at difference temperatures and the temperature dependence of integrated PL intensity

FWHM and peak position were obtained.The results show that the calculated temperature dependence of integrated PL intensity

FWHM and peak position is consistent with the experimental data reported before.The agreement between experimental data and model simulations suggests the description of the carrier dynamics process in self-assembled QDs by the steady-state rate equation model taking into account the temperature dependence of the energy band gap of self-assembled QDs material is viable.