A new kind of rare earth(RE)complex Tb(o-MBA)

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phen was synthesized

and was used as an emitting material in electroluminescence devices.The material was doped into poly N-vinylcarbazole(PVK)as the emitting layer

which is made by spin coating.Three kinds of devices were fabricated with the structures:(A)ITO/PVK:Tb(o-MBA)

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phen/LiF/Al;(B)ITO/PVK:Tb(o-MBA)

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phen/BCP/Alq

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/LiF/Al

(C)ITO/BCP/PVK:Tb(o-MBA)

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phen/Alq

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/LiF/Al.Bright green emission could be obtained from Device A and Device C.Photoluminescence(PL)and electroluminescence(EL)mechanisms of this material were investi-gated.There is an overlap between the PL spectrum of PVK and the excitation spectrum of the terbium complex

so there should be F rster energy transfer process between them.The excitation spectrum of Tb(o-MBA)

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phen doped PVK system is alike with the excitation spectrum of PVK

yet it is different with that of Tb(o-MBA)

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phen.So the emission of Tb(o-MBA)

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phen should partly come from the excitation of PVK.While in the OLED based on Tb(o-MBA)

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phen

the emission mainly come from the direct recombination of electron and hole.Bright green emission was obtained from the optimized multi-layer Device C and the highest EL brightness reached 180cd/m

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at the voltage of 17V.