The photoelectric translating efficiency of the ZnO film is a very important parameter of ZnOs photoelectric characters

which especially is useful on solar cells. Generally the photoelectric property of ZnO can be enhanced by using n type impurity dopants. But we discovered that the intrinsic defects can still make effective action even if the ZnO have doped by n type impurity dopants. In the process of DC reactive sputtering

an appro priate pressure proportion of O

2

and Ar will lead to an distinguished increase in the short circuit photocurrent of the n ZnO/p Si heterostructure

on the other hand

it shows very little effect on open circuit photovoltage. Even if the ZnO film have been doped with n type impurity dopants

the photoelectric translating efficiency of the ZnO film will reveal a sensitivity to the change of the O

2

and Ar proportion. Also

we have proved that this phenomenon is the final result of the deviation of the O

2

and Ar proportion in the DC reactive sputtering process

which consequently causes a change in the concentration of the n-type carrier(electron) and the short circuit photocurrent of the n-ZnO/p-Si heterostructure. Finally

we found that the photovoltage translating efficiency reaches its maximum value when the proportion of O

2

and Ar is about 5:3.