The intense visible photoluminescence (PL) of porous Si has attracted much interest as it opens up the possibility of fabricating light-emitting devices based on silicon technology. The effect was attributed to a quantum confinement of carriers in structures only a few nm in size

resulting in an effective increase of the apparent band-gap with respect to bulk Si. Recent years

it had been widely reported about Si and Ge nano particles embedded in SiO

2

and Si

3

N

4

films

some interesting phenomenon were also reported. Since the successful synthesis of amorphous semiconductor multiple films used plasma enhanced chemical vapour deposition (PECVD) by Exxon Corporation

the technology which need little complex epitaxy has attracted much attention

as we all known

the multiple films has a strong quantum effect

and also some interface effect would be magnified compared to the single layer films

it brings some novel phenomenon. The low temperature or room temperature photoluminescence had been widely reported

and they mostly concerned about the quantum effect and interface structure

but the photoluminescence dynamics of the multiple semiconductor films had not been reported. In this paper

we have performed multiple a-SiC

x

:H/a-Si:Hfilms successfully by PECVD. Microstructure and time-resolved PL spectra of the samples were studied. The results showed that a significant photoluminescence peak at about 650 nm was observed

and the peak position varies with annealing temperature. Amaximum intensity of PL peak and a minimum decay time (t

1

) were obtained for the sample annealed at 900℃. The origin of luminescence was suggested and discussed.