The nano-crystalline silicon carbide films were grown by hot filament chemical vapor deposition (HFCVD) technique with CH

4

and SiH

4

as reaction gases. To reduce the large lattice mismatch between SiC and silicon

a buffer layer was made by carbonizing the surface of the Si substrate in the HFCVD system. An optimum condition for the buffer layer was determined. Scanning electron microscope (SEM)

Fourier transform infrared spectroscopy (FTIR)

X-ray diffraction (XRD) were employed to analyze the composition and the structure of the films. The results from these techniques showed that the films deposited at relatively low temperature were nano-crystalline SiC

with an average dimension of about 60 nm. The visible-light emitting in the wavelength range from 380 nm to 420 nm had been observed from the nano-crystalline films excited by 325 nm He-Cd laser at room temperature in photoluminescence experiments. In the other side

we had analyzed and studied the variation of photoluminescence (PL) spectra with carbonized time. It was showed that the nano-crystalline SiC were obtained with carbonized time of 10 min on Si substrate for a buffer layer prepared by carbonization.