退火对AlGaInP/GaInP多量子阱LED外延片性能的影响

李述体; 范广涵; 周天明; 孙慧卿; 王浩; 郑树文; 郭志友

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退火对AlGaInP/GaInP多量子阱LED外延片性能的影响

论文 | 更新时间：2020-08-11

- 退火对AlGaInP/GaInP多量子阱LED外延片性能的影响
- Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers
- 发光学报 2004年25卷第5期页码：510-514
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
  
  国家科技攻关计划(00068)();华南师范大学博士启动基金(660119)资助项目()
- DOI：
  中图分类号： O472.3;O482.31
- 收稿：2003-09-15，
  
  修回：2003-12-24，
  
  纸质出版：2004-09-20
- 稿件说明：
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李述体, 范广涵, 周天明, 孙慧卿, 王浩, 郑树文, 郭志友. 退火对AlGaInP/GaInP多量子阱LED外延片性能的影响[J]. 发光学报, 2004,(5): 510-514

LI Shu-ti, FAN Guang-han, ZHOU Tian-ming, SUN Hui-qing, WANG Hao, ZHENG Shu-wen, GUO Zhi-you. Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers[J]. Chinese Journal of Luminescence, 2004,(5): 510-514
李述体, 范广涵, 周天明, 孙慧卿, 王浩, 郑树文, 郭志友. 退火对AlGaInP/GaInP多量子阱LED外延片性能的影响[J]. 发光学报, 2004,(5): 510-514 DOI：

LI Shu-ti, FAN Guang-han, ZHOU Tian-ming, SUN Hui-qing, WANG Hao, ZHENG Shu-wen, GUO Zhi-you. Influence of Thermal Annealing to the Characteristics of AlGaInP/GaInP Multiple Quantum Wells LED Wafers[J]. Chinese Journal of Luminescence, 2004,(5): 510-514 DOI：

摘要

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片.研究表明退火对外延片性能有重要影响.与未退火样品相比

460℃退火15min

外延片p型GaP层的空穴浓度由5.6×10

-3

增大到6.5×10

-3

p型AlGaInP层的空穴浓度由6.0×10

-3

增大到1.1×10

-3

.但退火温度为780℃时

p型GaP层和p型AlGaInP层的空穴浓度分别下降至8×10

-3

和1.7×10

-3

且Mg原子在AlGaInP系材料中的扩散加剧

导致未掺杂AlGaInP/GaInP多量子阱呈现p型电导.在460～700℃退火范围内

并没有使AlGaInP/GaInP多量子阱的发光性能发生明显变化.但退火温度为780℃时

AlGaInP/GaInP多量子阱的发光强度是退火前的2倍.

Abstract

The AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 LP-MOCVD.Properties of these wafers were investigated by ECV and photoluminescence measurements.The influences of thermal annealing on the characteristics of AlGaInP/GaInP multiple quantum wells LED wafers were studied. The AlGaInP/GaInP multiple quantum wells LED wafer for thermal annealing experiments consisted of a 0.5 μm n-GaAs buffer layer with carrier concentration of about 5×10

-3

a 0.5 μm n-(Al

0.7

0.3

)

0.5

P cladding layer with carrier concentration of about 3×10

-3

a (Al

0.3

0.7

)

0.5

P/Ga

0.5

P MQW active region

a 0.5 μm p-(Al

0.7

0.3

)

0.5

P cladding layer with carrier concentration of about 6×10

-3

and a 4.8 μm p-GaP current spreading layer with carrier concentration of about 5×10

-3

.The wafer was split into six pieces.These six pieces were annealed under different temperatures within 460～780℃ respectively for 15 min in nitrogen.Compared with as grown samples

the hole carrier concentration of GaP layer in LED wafer increased from 5.6×10

-3

to 6.5×10

-3

and the hole carrier concentration of AlGaInP layer increased from 6.0×10

-3

to 1.1×10

-3

when wafer was annealed under 460℃ for 15 min in nitrogen.The hole carrier concentration of GaP and AlGaInP layers did not obviously change when the annealed temperature was increased to 700℃.However

the hole carrier concentration of GaP layer and AlGaInP layer decreased to 8×10

-3

and 1.7×10

-3

when wafer was annealed under 780℃ for 15 min.And the diffusibility of Mg atoms was enhanced and the undoped AlGaInP/GaInP MQW was p type conductance when the annealing temperature increased to 780℃.The peak wavelength and FWHM did not obviously change when the annealing temperature was lower than 780℃.However

the PL peak intensity from MQW was about 2 times stronger than that of as grown sample when wafer was annealed under 780℃ for 15 min.

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