F-passivated ZnO nanocrystalline films were prepared from thermal oxidation of ZnF

2

films.The ZnF

2

films were deposited on a Si wafer by electron beam evaporation technique.X-ray diffraction and X-ray photoelectron spectroscopy were used to study the structural changes of ZnF

2

as a function of oxidation temperatures.When the ZnF

2

film was oxidized at 400℃ for 30 min

a polycrystalline hexagonal wurtzite structure of ZnO:F was obtained.The room-temperature photoluminescence spectrum of the ZnO:F film showed a strong near band edge ultraviolet emission located at 379 nm with a narrow linewidth of 73 meV and a very weak visible emission associated with deep level defects.The results indicated that the presence of residual F ions in ZnO film can dramatically decrease the visible emission and increase the ultraviolet emission of ZnO.