ZnO films were grown on sapphire substrate(0001) plane by atmospheric MOCVD.Surface mor-phology

crystalline quality

PL and electrical properties of the films were studied using AFM

DXRD

RBS/C

photolumi-nescence and Hall measurements.A columnar structure with an average column size of 1.89μm in diameter and a RMS of 6.257nm of the sample was observed by AFM measurement.The sample shows strong near-band edge emission at 380nm in PL spectra at room temperature

FWHM of the peak is 15nm

no deep level emission was observed.The electrical properties of the samples were measured by Hall measurements at room temperature.The carrier concentration and mobility are 2×10

17

cm

-3

and 75cm

2

·V

-1

·s

-1

respectively.Double-crystal X-ray diffraction and Rutherford backscattering/channel(RBS/C)analysis were used to check the crystalline quality of the film

FWHM of the DXRD rocking curve(omega-scan) is 0.04

and the RBS/C minimum yield

χ

min

of the film is 3.1%.Both these results indicate that the ZnO film has a good crystalline quality.