Si掺杂对AlGaInP/GaInP多量子阱性能的影响

李述体; 范广涵; 周天明; 王浩; 孙慧卿; 郑树文; 郭志友

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Si掺杂对AlGaInP/GaInP多量子阱性能的影响

研究论文 | 更新时间：2020-08-11

- Si掺杂对AlGaInP/GaInP多量子阱性能的影响
- Influence of Si-doping on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells
- 发光学报 2004年25卷第4期页码：375-378
- 作者机构：
  
  华南师范大学光电子材料与技术研究所,广东广州,510631
- 作者简介：
- 基金信息：
  
  国家科技攻关计划(00-068)();华南师范大学博士启动基金(660119)资助项目()
- DOI：
  中图分类号： O472.3
- 收稿日期：2003-07-22，
  
  修回日期：2003-09-24，
  
  纸质出版日期：2004-07-20
- 稿件说明：
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李述体, 范广涵, 周天明, 王浩, 孙慧卿, 郑树文, 郭志友. Si掺杂对AlGaInP/GaInP多量子阱性能的影响[J]. 发光学报, 2004,25(4): 375-378

LI Shu-ti, FAN Guang-han, ZHOU Tian-ming, WANG Hao, SUN Hui-qing, ZHENG Shu-wen, GUO Zhi-you. Influence of Si-doping on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2004,25(4): 375-378
李述体, 范广涵, 周天明, 王浩, 孙慧卿, 郑树文, 郭志友. Si掺杂对AlGaInP/GaInP多量子阱性能的影响[J]. 发光学报, 2004,25(4): 375-378 DOI：

LI Shu-ti, FAN Guang-han, ZHOU Tian-ming, WANG Hao, SUN Hui-qing, ZHENG Shu-wen, GUO Zhi-you. Influence of Si-doping on the Characteristics of AlGaInP/GaInP Multiple Quantum Wells[J]. Chinese Journal of Luminescence, 2004,25(4): 375-378 DOI：

摘要

采用LP-MOCVD技术在n-GaAs衬底上生长了AlGaInP/GaInP多量子阱红光LED外延片。以X射线双晶衍射技术和光致发光技术对外延片进行了表征

研究了Si掺杂对AlGaInP/GaInP多量子阱性能的影响。研究表明:掺Si能大大提高(Al

0.3

0.7

)

0.5

P/Ga

0.5

P多量子阱的发光强度。相对于未故意掺杂的样品

多量子阱垒层掺Si使多量子阱的发光强度提高了13倍

阱层和垒层均掺Si使多量子阱的发光强度提高了28倍。外延片的X射线双晶衍射测试表明

Si掺杂并没有使多量子阱的界面质量变差。

Abstract

The Si-doping AlGaInP/GaInP multiple quantum wells red LED wafers were grown by EMCORE GS/3200 low pressure metalorganic chemical vapor deposition(MOCVD).Properties of these wafers were investigated by double crystal X-ray diffraction and photoluminescence measurement.The influence of Si-doping on the characteristics of AlGaInP/GaInP multiple quantum wells was studied.The GaAs substrates used were cut 15 degree off the(100) plane towards the [011] direction.TMGa

TMIn

TMAl

AsH

and PH

were used as Ga

P precursors

respectively.CP

Mg and SiH

were used as p and n type doping reagents.The growth temperature was 620～72℃.The sequence of layers grown on n-GaAs substrate was

0.5μm n-GaAs buffer with the carrier concentration of about 5×10

-3

15 periods Al

0.5

As:Si/AlAs:Si DBR

0.5μm n-(Al

0.7

0.3

)

0.5

P cladding layer with carrier concentration of about 3×10

-3

(Al

0.3

0.7

)

0.5

P/Ga

0.5

P multiple quantum wells

0.5μm p-(Al

0.7

0.3

)

0.5

P cladding layer with carrier concentration of about 6×10

-3

and 5μm p-GaP current spreading layer with carrier concentration of about 5×10

-3

.Three AlGaInP LED wafers with different Si doping in 10 periods MQW were studied.The Sample A is unintentional doping 10 periods MQW wafer.The Sample B is Si-doping in the barriers wafer.The Sample C was Sidoping in the barriers and wells wafer.The doping dose was the same as that of the 0.5μm n-(Al

0.7

0.3

)

0.5

P cladding layer.The(004) X-ray diffraction curves of these three wafers with different Si doping in 10 periods MQW were obtained.Besides the peaks of GaAs and AlGaInP

two satellite peaks are observed in all samples

which are listed by dashed line.It indicates that the interface quality of MQW does not become worse by Si doping.The periods of Sample A

B and C is 14.6

15.2

15.7nm

respectively.The growth rate of MQW increases with the Si-doping.In PL spectra of these three samples at room temperature

the peak intensity of Sample B is strong as 13 times as that of Sample A

and the peak intensity of Sample C is strong as 28 times as that of Sample A.It indicates that the PL intensity of MQW can be largely enhanced by the Si doping in MQW.Moreover

the peak position and width do not obviously change by Si-doping.

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